2SC4226-T1-A
CEL
- Lifecycle
- Active
- Stock
- 2016 ПКС
- Package
- SOT-323
- Series
- Транзисторы - Биполярные (BJT) - РФ
Это подробное сравнение 2SC4226-T1-A и 2SC4226-A предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.
Replacement verdict
The 2SC4226-T1-A and 2SC4226-A are functionally equivalent NPN silicon RF transistors from the same manufacturer, sharing identical die specifications and electrical characteristics. The primary distinction lies in packaging format and delivery configuration, making them suitable substitutes when board-level footprint compatibility is confirmed.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2SC4226-T1-A | 2SC4226-A | Why it matters |
|---|---|---|---|
| Transistor Type | NPN | NPN | Both are NPN bipolar transistors, so polarity and basic circuit orientation are compatible. |
| Collector-Emitter Voltage (VCEO) | 12 V | 12 V | Defines the maximum voltage the transistor can block across collector-emitter, affecting voltage compatibility in the target circuit. |
| Collector Current (IC) | 100 mA | 100 mA | Sets the maximum continuous current the device can handle, which must meet or exceed the load requirement. |
| Power Dissipation | 150 mW | 150 mW | Determines how much power the transistor can safely dissipate, influencing thermal design and reliability. |
| Transition Frequency (fT) | 4.5 GHz | 4.5 GHz | Indicates high-frequency performance; matching fT ensures similar RF and switching behavior. |
| DC Current Gain (hFE) | 50 to 250 | 50 to 250 | Affects signal amplification and biasing; identical ranges support direct substitution in gain-sensitive designs. |
| Package / Mounting | SC-70 / SOT-323, Surface Mount | SC-70 / SOT-323, Surface Mount | Package and mounting style must match the PCB footprint and assembly process for drop-in replacement. |
| Packaging / Ordering Suffix | Tape and Reel (T1) | Bulk / Standard (A) | Different packaging options affect inventory handling, automated assembly, and minimum order quantities. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2SC4226-T1-A | 2SC4226-A |
|---|---|---|
| Supplier | - | CEL |
| Part Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown(Max) | 12V | 12V |
| Frequency - Transition | 4.5GHz | 4.5GHz |
| Noise Figure(d B Typ @ f) | 1.2dB @ 1GHz | 1.2dB @ 1GHz |
| Gain | 9dB | 9dB |
| Power - Max | 150mW | 150mW |
| DC Current Gain(h FE)(Min) @ Ic Vce | 40 @ 7mA, 3V | 40 @ 7mA, 3V |
| Current - Collector(Ic)(Max) | 100mA | 100mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
The 2SC4226-T1-A and 2SC4226-A are both NPN silicon epitaxial planar transistors from Renesas (formerly NEC) intended for high-frequency amplifier and switching applications. The primary difference is the packaging and shipping format: the 2SC4226-T1-A is supplied in embossed tape-and-reel packaging (T1 suffix) for automated surface-mount assembly, while the 2SC4226-A is supplied in bulk or alternative packaging without the tape-and-reel designation. Both share the same die and electrical characteristics.
Yes. Both variants use the same transistor die and are specified with identical electrical parameters, including a collector-emitter voltage (VCEO) of 20 V, collector current (IC) of 100 mA, and transition frequency (fT) of approximately 4.5 GHz. The suffix differences relate to packaging and ordering format, not to semiconductor performance.
Both devices are housed in the SC-70 (SOT-323) 3-pin surface-mount package, which is also referenced as the 2-2E1A or similar manufacturer-specific package code. The package has a typical footprint of approximately 2.0 mm × 1.25 mm, making it suitable for compact RF and portable electronic designs.
Yes, because both share the same die, package, and electrical specifications, they are functionally interchangeable in a given circuit. The only practical consideration is the assembly process: the 2SC4226-T1-A is optimized for tape-and-reel pick-and-place equipment, while the 2SC4226-A may require different handling depending on its packaging format.
These transistors are commonly used in high-frequency amplifiers, RF front-end modules, low-noise amplifiers, oscillators, and general-purpose switching circuits. Their high transition frequency and low noise figure make them suitable for VHF, UHF, and microwave applications in consumer and industrial electronics.
The typical transition frequency (fT) for both the 2SC4226-T1-A and 2SC4226-A is 4.5 GHz, measured under specified test conditions. This high fT supports operation in RF and high-speed switching applications.
Both the 2SC4226-T1-A and 2SC4226-A have a maximum collector current (IC) rating of 100 mA. This rating is consistent across both variants because they share the same semiconductor die and internal construction.
RoHS compliance depends on the specific manufacturing date and supplier. Renesas has produced lead-free versions of the 2SC4226 series, but the exact compliance status should be verified against the manufacturer's datasheet or a trusted distributor's product page for the specific orderable part number. Do not assume compliance without confirming the relevant documentation.