Спецификации
| Атрибут | Ценность |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 14.6A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Capacitance @ Vr F | 1107pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-276 |
