Спецификации
| Атрибут | Ценность |
| Supplier | GeneSiC Semiconductor |
| Package | Tube |
| ProductStatus | Obsolete |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 14.6A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.5 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 650 V |
| Capacitance@VrF | 1107pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | TO-276AA |
| SupplierDevicePackage | TO-276 |
