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2EDN7524FXTMA1
+БОМIC GATE DRVR LOW-SIDE DSO8-60
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Производителькомпанией Infineon Technologies
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Мфр. Часть #2EDN7524FXTMA1
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Лист данных 2EDN7524FXTMA1 DataSheet
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Пакет DSO-8
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В наличии4159
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | EiceDriver™ |
| ProductStatus | Active |
| DrivenConfiguration | Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 4.5V ~ 20V |
| Current-PeakOutput(SourceSink) | 5A, 5A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 5.3ns, 4.5ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
Key points:
- Technology: trench-style MOSFETs for low Rds(on) and fast switching
- Configuration: two N-channel MOSFETs in one device (per-device Vds and Id shown in the datasheet)
- Packaging: compact SMT package (TMA1 variant); consider thermal dissipation in your design
- Applications: synchronous buck/boost converters, motor drivers, power-switching stages, battery-powered systems
- Data: check the official datasheet for exact electrical specs, allowed operating conditions, and recommended circuit layouts
For precise values and to ensure correct application, refer to the manufacturer’s datasheet and product page.
Pinout
- Function: Dual N-channel enhancement-mode MOSFET pair in one package (common configuration for switching/half-bridge applications).
Manufacturer
What kind of company: A Japanese multinational semiconductor company that designs and manufactures microcontrollers, analog and power ICs, and other semiconductor solutions for automotive, industrial, and consumer markets.