Спецификации
| Атрибут | Ценность |
| Supplier | Central Semiconductor Corp |
| Package | Bulk |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Voltage-Breakdown(V(BR)GSS) | 20 V |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-Drain(Idss)@Vds(Vgs=0) | 300 mA @ 10 V |
| Voltage-Cutoff(VGSoff)@Id | 8 V @ 10 µA |
| InputCapacitance(Ciss)(Max)@Vds | 32pF @ 10V |
| Power-Max | 360 mW |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-226-3, TO-92-3 (TO-226AA) |
