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2N7002-TP
+БОМMOSFET N-CH 60V 115MA SOT23
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ПроизводительMCC (микрокоммерческие компоненты)
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Мфр. Часть #2N7002-TP
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Лист данных 2N7002-TP DataSheet
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В наличии4026
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 1.08W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | 2N7002 |
Обзор
Description
The 2N7002-TP operates by controlling the flow of current between the drain and source terminals through the gate terminal, which is voltage-controlled. This allows for low power consumption and minimal heat generation compared to traditional bipolar transistors.
With a low gate threshold voltage, it can be easily driven by standard logic levels, making it ideal for interfacing with microcontrollers and digital circuits.
Its compact package and reliability make the 2N7002-TP a popular choice in various applications, including power management, signal switching, and relay driving. Overall, it is a fundamental component in modern electronic design.
Equivalent
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) up to 0.5A.
3. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, enabling operation with low gate drive voltages.
4. R_DS(on): Low on-resistance, typically around 0.5Ω, ensuring efficient power handling.
5. Package Type: Available in a small SOT-23 package, making it suitable for space-constrained designs.
6. Fast Switching Speed: Ideal for switching applications due to rapid turn-on and turn-off characteristics.
7. Applications: Commonly used in low-power switching, signal amplification, and as a general-purpose switch.
These features make the 2N7002-TP suitable for various electronic applications, including battery management systems and motor drivers.
Pinout
1. Gate (G): Controls the MOSFET's operation; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal where current exits the MOSFET; connects to the load or higher potential.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground or lower potential in an N-channel configuration.
Overall, the 2N7002-TP is valued for its low on-resistance, fast switching speed, and ability to handle moderate currents, making it suitable for various low-power applications in digital and analog circuits.
Manufacturer
Vishay specializes in producing products like diodes, MOSFETs (metal-oxide-semiconductor field-effect transistors), capacitors, resistors, and inductors, among others. The 2N7002-TP is a N-channel MOSFET commonly used in switching and amplification applications. Vishay's extensive portfolio and commitment to innovation position it as a key player in the electronics manufacturing industry, serving a wide range of markets globally.
Application
1. Switching Circuits: Ideal for low-power switching in electronic devices.
2. Signal Amplification: Used in analog circuits for signal processing.
3. Load Driving: Efficiently drives resistive and inductive loads in control circuits.
4. Level Shifting: Facilitates signal level conversion between different voltage systems.
5. Power Management: Employed in power management systems to control power delivery.
Its compact size, low on-resistance, and fast switching capabilities make it suitable for consumer electronics, automotive applications, and embedded systems.