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Спецификации
| Атрибут | Ценность |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 5 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 2V @ 400mA, 4A |
| Current - Collector Cutoff(Max) | 100µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 120 @ 1A, 5V |
| Power - Max | 30 W |
| Frequency - Transition | 12MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
