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2SK2009
+БОМToshiba
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ПроизводительТошиба
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Мфр. Часть #2SK2009
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В наличии3379
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
Обзор
Description
This MOSFET is often employed in power supply circuits, motor drivers, and other high-efficiency power conversion applications due to its ability to handle significant power levels while maintaining low energy losses. Its construction allows it to efficiently manage heat dissipation when operating under load conditions. In terms of packaging, the 2SK2009 usually comes in a TO-220 or similar package, which provides a convenient form factor for heat sinking and integration into various designs.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around 60V and a continuous drain current (Id) of approximately 30A, making it suitable for medium power applications.
2. Low On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)), which enables efficient current flow with minimal power loss.
3. Fast Switching Speed: It is designed for high-speed switching applications, which is beneficial in switching power supplies and other high-frequency circuits.
4. Enhancement Mode: Being an enhancement-mode MOSFET, it is normally off when the gate-source voltage (Vgs) is zero. It requires a positive Vgs to conduct.
5. Thermal Management: The MOSFET is built to handle thermal dissipation efficiently, often featuring a TO-220 or similar package with a metal tab for heat sinking.
6. Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
These features make the 2SK2009 a versatile component in various electronic and high-efficiency power systems.
Pinout
1. Gate (G): This is the control terminal that modulates the flow of current between the source and drain. A voltage applied to the gate controls the conductivity of the device.
2. Drain (D): This terminal is where the current flows out from the device when it is in the on-state. It is connected to the load in a circuit.
3. Source (S): This terminal is where the current enters into the device. It is typically connected to ground or the lower potential in a circuit.
These MOSFETs are often used in switching applications due to their high-speed switching capabilities and efficiency.