2SK3018T106

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2SK3018T106

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MOSFET N-CH 30V 100MA UMT3

  • Производителькомпанией Rohm Semiconductor

  • Мфр. Часть #2SK3018T106

  • Пакет SOT-23-3

  • В наличии6710

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 100mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4V
Rds On(Max) @ Id Vgs 8Ohm @ 10mA, 4V
Vgs(th)(Max) @ Id 1.5V @ 100µA
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 13 pF @ 5 V
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package UMT3

Обзор

Description

The 2SK3018T106 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits. It is designed for use in high-speed switching applications due to its ability to handle high voltages and currents. Key features of the 2SK3018T106 include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D), which make it suitable for applications requiring efficient power management.
The transistor is used in various applications, such as power supplies, motor drivers, and other electronic devices that require fast switching and efficiency. It is often chosen for its reliability, low on-resistance, and cost-effectiveness in circuit design. Additionally, the 2SK3018T106 is encapsulated in a package that facilitates heat dissipation, enhancing its performance in high-power applications. When integrating this MOSFET into a circuit, proper attention must be given to its configuration and the external components to optimize performance and ensure stability.

Equivalent

The 2SK3018T106 is an N-channel MOSFET transistor. Equivalent products might include other N-channel MOSFETs with similar voltage and current ratings. Some possible equivalents could be the IRF530, IRF540, or 2N7000, depending on the specific requirements such as voltage, current, and package type. Always compare the datasheets to ensure compatibility in terms of electrical characteristics and package dimensions.

Features

The 2SK3018T106 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. Below are some of its key features:
1. N-Channel MOSFET: It operates with a negative channel, making it ideal for high-speed switching applications.
2. Low On-State Resistance: The MOSFET features a low R_DS(on), which reduces power loss and enhances efficiency.
3. High-Speed Switching: It is designed for fast switching speeds, making it suitable for applications that require quick transitions between on and off states.
4. High Input Impedance: This feature allows it to operate with lower gate drive power, ensuring efficient performance.
5. Enhanced Durability: The device is built to handle robust operations, with good thermal stability and reliability.
6. Compact Package: The MOSFET is available in a small, surface-mount package, making it easy to use in compact circuit designs.
7. Applications: Ideal for use in power management, load switching, and DC-DC converters, among other applications.
These features make the 2SK3018T106 a versatile component in various electronic applications.

Pinout

The 2SK3018T106 is a N-channel MOSFET. It is typically used in various electronic applications that require efficient switching. The pin count for this MOSFET is three, which are:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
These pins facilitate the primary function of the MOSFET, which is to act as a switch or amplifier in electronic circuits. The specific pin layout and configuration can vary depending on the package type, so it’s always important to refer to the manufacturer's datasheet for detailed specifications and pin diagrams.

Manufacturer

The 2SK3018T106 is a product manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that specializes in the development and production of microcontrollers, analog, power, and SoC (System on Chip) products. It was established in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation, which was originally formed by the merger of the semiconductor divisions of Hitachi and Mitsubishi Electric. Renesas is recognized for its significant contributions to the automotive, industrial, home electronics, and information communication technology sectors, providing essential components used in a wide variety of electronic devices and systems. The company is known for its focus on embedded solutions, which are critical in driving the advancement of connected and intelligent systems across various industries.

Application

The 2SK3018T106 is a type of N-channel MOSFET transistor commonly used in electronic applications. Its application areas include:
1. Power Management: Used in power supply circuits, voltage regulation, and DC-DC converters.
2. Motor Control: Essential for driving motors in various electronic devices.
3. Switching Applications: Suitable for high-speed switching applications due to its fast switching capabilities.
4. Amplification: Can be used in audio and RF amplification circuits.
5. Load Switching: Ideal for controlling loads in industrial and consumer electronics.
6. Inverter Circuits: Used in inverter designs for renewable energy systems like solar inverters.
These applications benefit from the MOSFET's efficiency, reliability, and low on-resistance.

Package

The 2SK3018T106 is a type of N-channel MOSFET and it is typically packaged in a Surface-Mount Device (SMD) format. Specifically, it is available in a compact, space-saving SOT-23 package, making it suitable for various electronic applications that require efficient power management in limited space.

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