Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io)(per Diode) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 400 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
