Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 2 Independent |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io)(perDiode) | 20A |
| Voltage-Forward(Vf)(Max)@If | 1.8 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 400 µA @ 600 V |
| OperatingTemperature-Junction | -55°C ~ 175°C |
| MountingType | Chassis Mount |
| Package/Case | ISOTOP |
