Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Series | POWER MOS 7® |
| Part Status | Active |
| IGBT Type | PT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 64 A |
| Power - Max | 284 W |
| Vce(on)(Max) @ Vge Ic | 3.9V @ 15V, 35A |
| Current - Collector Cutoff(Max) | 350 µA |
| Input Capacitance(Cies) @ Vce | 3.24 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
