Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain(Id) @ 25°C | 42A |
| Rds On(Max) @ Id Vgs | 100mOhm @ 21A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 3mA |
| Gate Charge(Qg)(Max) @ Vgs | 273nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 6761pF @ 25V |
| Power - Max | 416W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
