Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain(Id) @ 25°C | 36A |
| Rds On(Max) @ Id Vgs | 270mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 5mA |
| Gate Charge(Qg)(Max) @ Vgs | 308nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 8700pF @ 25V |
| Power - Max | 694W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
