Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Series | POWER MOS 7® |
| Part Status | Active |
| FET Type | 4 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 34A |
| Rds On(Max) @ Id Vgs | 348mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 5mA |
| Gate Charge(Qg)(Max) @ Vgs | 374nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 10300pF @ 25V |
| Power - Max | 780W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
