Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Active |
| FETType | 4 N-Channel |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
| Current-ContinuousDrain(Id)@25°C | 147A (Tc) |
| RdsOn(Max)@IdVgs | 17mOhm @ 100A, 20V |
| Vgs(th)(Max)@Id | 4V @ 30mA |
| GateCharge(Qg)(Max)@Vgs | 332nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 5576pF @ 1000V |
| Power-Max | 750W |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | Module |
