AS6C8016-55ZIN

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AS6C8016-55ZIN

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IC SRAM 8MBIT PARALLEL 44TSOP II

  • ПроизводительКомпания Alliance Memory, Inc.

  • Мфр. Часть #AS6C8016-55ZIN

  • Лист данных AS6C8016-55ZIN DataSheet

  • В наличии2370

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Спецификации

Атрибут Ценность
Part Status Active
Base Product Number AS6C8016
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 8Mbit
Memory Organization 512K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Voltage - Supply 2.7V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Packaging Tray
Access Time 55 ns

Обзор

Description

The AS6C8016-55ZIN is a low-power CMOS static random-access memory (SRAM) device designed for high-speed and efficient performance in digital systems. It offers a storage capacity of 8 megabits (1 megabyte) and is organized as 512K words by 16 bits. This SRAM is particularly suited for battery-backed and critical data retention applications due to its low power consumption. Operating at a wide voltage range from 2.7V to 5.5V, it provides flexibility across various digital environments.
The AS6C8016-55ZIN features a fast access time of 55 nanoseconds, making it ideal for applications where quick data retrieval is essential. It operates in the industrial temperature range, making it suitable for harsh conditions. The device is housed in a 44-pin plastic small outline package (SOP), which reduces space on circuit boards while ensuring reliable performance. With its combination of speed, low power consumption, and robust design, the AS6C8016-55ZIN is widely used in telecommunications, networking, and industrial controls.

Equivalent

The AS6C8016-55ZIN is a 512Kx16 low-power CMOS static RAM. Equivalent products include:
1. Cypress CY62167EV30LL
2. Alliance Memory AS6C8016 series (other speed grades or temperature ranges)
3. Renesas R1LP0816 series
4. ISSI IS61WV102416
5. Micron MT48LC8M16A2 series
These alternatives should be verified for compatibility regarding speed, voltage, and other specific requirements. Always consult the datasheets to ensure they meet the necessary specifications for your application.

Features

The AS6C8016-55ZIN is a low-power, high-speed CMOS static RAM (SRAM) with a capacity of 512K x 16 bits (8 Megabits total). Key features include:
1. High Speed: It has an access time of 55 nanoseconds, making it suitable for applications requiring quick data access.
2. Low Power Consumption: The device is designed for low power usage during both active and standby modes, making it ideal for battery-operated systems.
3. Wide Operating Voltage: It operates over a voltage range of 2.7V to 3.6V, providing flexibility for different power supply configurations.
4. Data Retention: The SRAM supports data retention at a minimum voltage level, ensuring data integrity in power-down conditions.
5. Industrial Temperature Range: It is designed to operate over a temperature range of -40°C to 85°C, suitable for industrial applications.
6. Standard Package Options: The AS6C8016-55ZIN is available in standard packaging, facilitating easy integration into various designs.
These features make it well-suited for applications in telecommunications, networking, and embedded systems where reliable, fast, and low-power memory is essential.

Pinout

The AS6C8016-55ZIN is a low power CMOS static RAM with a pin count of 44. It is organized as 512K x 16 bits. The primary function of this chip is to provide high-speed read and write access for memory storage applications. It operates with a supply voltage range of 4.5V to 5.5V and is optimized for low power consumption, making it suitable for battery-powered devices.
Key functions and features include:
- Random access memory (RAM) with a total storage capacity of 8 megabits.
- A fast access time of 55 nanoseconds.
- SRAM (Static RAM) technology, which means it does not require periodic refreshing, unlike Dynamic RAM (DRAM).
- Data retention capability during power-down due to its low standby power consumption.
The AS6C8016-55ZIN is typically used in applications like embedded systems, industrial electronics, and other memory-intensive applications where reliability and performance are critical.

Manufacturer

The AS6C8016-55ZIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in the production of legacy memory products, including SRAM, DRAM, and SDRAM. They focus on providing long-term support for older memory technologies that are often discontinued by other manufacturers, catering primarily to customers who require reliable access to legacy memory components for industrial, communications, medical, and automotive applications.

Application

The AS6C8016-55ZIN is a low-power, high-speed 512K x 16-bit CMOS static RAM (SRAM). Its application areas include:
1. Embedded Systems: Used in microcontroller-based applications for temporary data storage.
2. Industrial Control: Supports control systems requiring reliable data retention.
3. Communications Equipment: Utilized in routers and switches for buffering and data caching.
4. Consumer Electronics: Employed in devices like smartphones and tablets for efficient power management.
5. Automotive Systems: Used in in-vehicle infotainment and navigation systems for data processing.
6. Medical Devices: Supports applications needing fast and reliable memory solutions, such as imaging systems.
Its low power consumption and high-speed operation make it ideal for applications where energy efficiency and quick data access are critical.

Package

The AS6C8016-55ZIN is a low power CMOS static RAM (SRAM) chip. It comes in a 44-pin plastic Small Outline J-Lead (SOJ) package type.

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