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AS6C8016-55ZIN
+БОМIC SRAM 8MBIT PARALLEL 44TSOP II
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ПроизводительКомпания Alliance Memory, Inc.
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Мфр. Часть #AS6C8016-55ZIN
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Лист данных AS6C8016-55ZIN DataSheet
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В наличии2370
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Base Product Number | AS6C8016 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mbit |
| Memory Organization | 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 2.7V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Packaging | Tray |
| Access Time | 55 ns |
Обзор
Description
The AS6C8016-55ZIN features a fast access time of 55 nanoseconds, making it ideal for applications where quick data retrieval is essential. It operates in the industrial temperature range, making it suitable for harsh conditions. The device is housed in a 44-pin plastic small outline package (SOP), which reduces space on circuit boards while ensuring reliable performance. With its combination of speed, low power consumption, and robust design, the AS6C8016-55ZIN is widely used in telecommunications, networking, and industrial controls.
Equivalent
1. Cypress CY62167EV30LL
2. Alliance Memory AS6C8016 series (other speed grades or temperature ranges)
3. Renesas R1LP0816 series
4. ISSI IS61WV102416
5. Micron MT48LC8M16A2 series
These alternatives should be verified for compatibility regarding speed, voltage, and other specific requirements. Always consult the datasheets to ensure they meet the necessary specifications for your application.
Features
1. High Speed: It has an access time of 55 nanoseconds, making it suitable for applications requiring quick data access.
2. Low Power Consumption: The device is designed for low power usage during both active and standby modes, making it ideal for battery-operated systems.
3. Wide Operating Voltage: It operates over a voltage range of 2.7V to 3.6V, providing flexibility for different power supply configurations.
4. Data Retention: The SRAM supports data retention at a minimum voltage level, ensuring data integrity in power-down conditions.
5. Industrial Temperature Range: It is designed to operate over a temperature range of -40°C to 85°C, suitable for industrial applications.
6. Standard Package Options: The AS6C8016-55ZIN is available in standard packaging, facilitating easy integration into various designs.
These features make it well-suited for applications in telecommunications, networking, and embedded systems where reliable, fast, and low-power memory is essential.
Pinout
Key functions and features include:
- Random access memory (RAM) with a total storage capacity of 8 megabits.
- A fast access time of 55 nanoseconds.
- SRAM (Static RAM) technology, which means it does not require periodic refreshing, unlike Dynamic RAM (DRAM).
- Data retention capability during power-down due to its low standby power consumption.
The AS6C8016-55ZIN is typically used in applications like embedded systems, industrial electronics, and other memory-intensive applications where reliability and performance are critical.
Manufacturer
Application
1. Embedded Systems: Used in microcontroller-based applications for temporary data storage.
2. Industrial Control: Supports control systems requiring reliable data retention.
3. Communications Equipment: Utilized in routers and switches for buffering and data caching.
4. Consumer Electronics: Employed in devices like smartphones and tablets for efficient power management.
5. Automotive Systems: Used in in-vehicle infotainment and navigation systems for data processing.
6. Medical Devices: Supports applications needing fast and reliable memory solutions, such as imaging systems.
Its low power consumption and high-speed operation make it ideal for applications where energy efficiency and quick data access are critical.