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BC850CW
+БОМTRANS NPN 45V 0.1A SOT-323
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ПроизводительТайваньская корпорация полупроводников
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Мфр. Часть #BC850CW
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Лист данных BC850CW DataSheet
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В наличии5394
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Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Base Product Number | BC850 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Power - Max | 200 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | SC-70, SOT-323 |
| Supplier Device Package | SOT-323 |
| Packaging | Tape & Reel (TR) |
Обзор
Description
Key features of the BC850CW include its high current gain and low collector-emitter saturation voltage, which enhances performance in switching applications. The transistor is designed to operate effectively over a wide range of temperatures and is used in various consumer electronics, audio devices, and communication equipment.
The BC850CW is characterized by its maximum collector current, collector-base voltage, and power dissipation ratings, which should be considered during circuit design to prevent damage. Overall, the BC850CW is valued for its reliability and efficiency in small-signal applications.
Equivalent
1. BC850C - Same chip in different packaging
2. BC547C/BC548C/BC549C - Similar electrical characteristics
3. 2N5088 - Higher gain alternative
4. 2N3904 - Popular NPN transistor with comparable specs
5. PN2222A - Suitable for switching and amplification tasks
Always verify the specifications and pin configurations before substituting to ensure compatibility in your application.
Features
1. SMD Package: The BC850CW comes in a SOT-323 surface-mount package, making it suitable for compact circuit designs.
2. NPN Type: As an NPN transistor, it is used for amplifying or switching applications.
3. Voltage and Current Ratings: It typically has a maximum collector-emitter voltage (Vceo) of 45V and a maximum collector current (Ic) of 100mA.
4. Power Dissipation: The transistor can dissipate up to 250mW of power.
5. Gain: It offers a DC current gain (hFE) range of approximately 110 to 800, depending on the specific variant and operating conditions, which enables effective amplification.
6. Temperature Range: It operates efficiently within a temperature range of -55°C to +150°C.
7. Applications: Ideal for use in low-power amplification and switching applications in consumer electronics, automotive, and communication devices.
These features make the BC850CW a versatile component for various low-power electronic applications.
Pinout
1. Pin 1 (Base): This pin is used to control the transistor's operation. A small current at the base is used to switch the transistor on or off.
2. Pin 2 (Emitter): The emitter pin is where current flows out of the transistor. It is typically connected to the ground or a negative voltage supply in NPN transistors.
3. Pin 3 (Collector): The collector is the pin through which the main current flows from the power supply through the transistor when it is turned on.
These transistors are used for amplification and switching applications due to their ability to amplify current. The BC850CW is valued for its compact size and reliability in low-power applications.