Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Box (TB) |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown(Max) | 25V |
| Frequency - Transition | 1.1GHz |
| Power - Max | 350mW |
| DC Current Gain(h FE)(Min) @ Ic Vce | 38 @ 7mA, 10V |
| Current - Collector(Ic)(Max) | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
