Изображения являются только для ссылки
BLF188XRU
+БОМRF MOSFET LDMOS 50V SOT539A
-
ПроизводительКомпания Ampleon USA Inc.
-
Мфр. Часть #BLF188XRU
-
В наличии2253
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Discontinued at Digi-Key |
| Technology | LDMOS |
| Frequency | 600MHz |
| Gain | 24.4dB |
| Voltage - Test | 50 V |
| Current - Test | 40 mA |
| Power - Output | 1400W |
| Voltage - Rated | 135 V |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-539A |
| Supplier Device Package | SOT539A |
| Base Product Number | BLF188 |
| Configuration | Dual, Common Source |
Обзор
Description
Key specifications include a high output power capability, low distortion, and wide frequency response, which make it ideal for applications such as broadcast transmitters and other RF communication systems. Its encapsulation typically comes in a durable package that aids in efficient heat dissipation.
The BLF188XRU is known for its reliability and performance, making it a popular choice among engineers and designers in the RF industry. Proper thermal management and circuit design are essential for maximizing its performance and longevity.
Equivalent
Features
1. High Power Output: Capable of delivering up to 250W output power, making it suitable for various high-efficiency applications.
2. Wide Frequency Range: Operates effectively from 130 MHz to 600 MHz, ideal for commercial and industrial RF transmitters.
3. High Gain: Provides a typical gain of around 17 dB, ensuring strong signal amplification.
4. Robust Design: Features excellent thermal performance, allowing for reliable operation under demanding conditions.
5. Low Distortion: Offers low intermodulation distortion, which is critical for high-fidelity transmission.
6. Hermetically Sealed Package: Ensures improved durability and longevity, suitable for harsh environments.
These features make the BLF188XRU a preferred choice for broadcast and communication applications, enhancing overall system performance.
Pinout
Pin Functions:
1. Gate (G) - This pin controls the transistor's operation and is used for input signal connection.
2. Drain (D) - This pin is where the output power is taken from. It connects to the power supply.
3. Source (S) - This pin connects to the ground or reference point, allowing current to return from the drain.
4. Thermal pad - While not a pin per se, the thermal pad is essential for heat dissipation, helping to maintain the transistor's reliability during operation.
The BLF188XR is commonly used in applications like base stations and RF amplifiers due to its high efficiency and performance capabilities.
Manufacturer
NXP was formed in 2006 as a spin-off from Philips and has since become a key player in the semiconductor market, focusing on innovation and advanced technology development. The BLF188XRU is a high-power LDMOS (laterally diffused metal-oxide semiconductor) transistor, commonly used in RF amplification applications, particularly in the broadcasting and communication sectors. The company is known for its commitment to quality and reliability, making it a preferred choice for engineers and designers in need of high-performance electronic components.
Application
1. Base Stations: Amplifying signals in cellular infrastructure for 4G and 5G networks.
2. Broadcast Transmitters: Used in TV and radio broadcast systems for high-frequency power amplification.
3. Industrial RF Heating: Employed in applications such as induction heating and plasma generation.
4. Radar Systems: Utilized in radar equipment for transmitting signals effectively.
5. General RF Amplification: Applicable in various communication and industrial RF amplification systems.
Its robust performance and efficiency make it suitable for these demanding applications.