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BSC014N04LSIATMA1
+БОМMOSFET N-CH 40V 31A/100A TDSON
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Производителькомпанией Infineon Technologies
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Мфр. Часть #BSC014N04LSIATMA1
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Лист данных BSC014N04LSIATMA1 DataSheet
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В наличии24541
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.45mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 55 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4000 pF @ 20 V |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
Обзор
Description
BSC014N04LSIATMA1 appears to be a specific code or identifier, possibly related to a course, product, or project. In the context of academic courses, such codes are often used to uniquely identify a particular subject or module within a curriculum. The prefix "BSC" might suggest a connection to a Bachelor of Science program. However, without additional context or information, it's challenging to provide a precise introduction.
If the code pertains to a course, an introduction might include a brief overview of the subject matter, objectives, and relevance to a broader field of study. For instance, if this is a biology course, the introduction might cover foundational concepts, key topics such as genetics or ecology, and its importance for students pursuing careers in science.
If this is related to a product or project, the introduction would highlight its purpose, key features or goals, and potential applications or benefits.
For a more specific and accurate introduction, additional context or clarification regarding the domain or field related to BSC014N04LSIATMA1 would be necessary.
If the code pertains to a course, an introduction might include a brief overview of the subject matter, objectives, and relevance to a broader field of study. For instance, if this is a biology course, the introduction might cover foundational concepts, key topics such as genetics or ecology, and its importance for students pursuing careers in science.
If this is related to a product or project, the introduction would highlight its purpose, key features or goals, and potential applications or benefits.
For a more specific and accurate introduction, additional context or clarification regarding the domain or field related to BSC014N04LSIATMA1 would be necessary.
Equivalent
The BSC014N04LSIATMA1 is a N-channel MOSFET commonly used in power management applications. Equivalent products include:
1. IRLZ44N from Infineon
2. FQP30N06L from ON Semiconductor
3. STP40NF10 from STMicroelectronics
These alternatives share similar voltage, current, and RDS(on) characteristics, suitable for switching applications. Always confirm specific requirements and datasheet parameters for compatibility in your application.
1. IRLZ44N from Infineon
2. FQP30N06L from ON Semiconductor
3. STP40NF10 from STMicroelectronics
These alternatives share similar voltage, current, and RDS(on) characteristics, suitable for switching applications. Always confirm specific requirements and datasheet parameters for compatibility in your application.
Features
The BSC014N04LSIATMA1 is a power MOSFET designed for various electronic applications. Here are its key features:
1. N-Channel MOSFET: This device is an N-channel enhancement mode transistor, suitable for high-efficiency power switching applications.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 40V and a continuous drain current (I_D) of up to 50A.
3. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), which reduces power loss and heat generation during operation.
4. Thermal Performance: It often includes features for enhanced thermal performance, such as a low thermal resistance package.
5. Fast Switching: The device supports fast switching speeds, suitable for high-frequency applications.
6. Robust Design: It is designed to handle high power, with protections against overcurrent and overvoltage conditions.
7. Applications: Commonly used in DC-DC converters, motor controllers, and other power management systems.
These features make it a versatile component in designing efficient and reliable power electronic systems.
1. N-Channel MOSFET: This device is an N-channel enhancement mode transistor, suitable for high-efficiency power switching applications.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 40V and a continuous drain current (I_D) of up to 50A.
3. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), which reduces power loss and heat generation during operation.
4. Thermal Performance: It often includes features for enhanced thermal performance, such as a low thermal resistance package.
5. Fast Switching: The device supports fast switching speeds, suitable for high-frequency applications.
6. Robust Design: It is designed to handle high power, with protections against overcurrent and overvoltage conditions.
7. Applications: Commonly used in DC-DC converters, motor controllers, and other power management systems.
These features make it a versatile component in designing efficient and reliable power electronic systems.
Pinout
The BSC014N04LSIATMA1 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It belongs to the OptiMOS™ series, designed to provide high efficiency and performance in power conversion applications.
This specific MOSFET is typically housed in a standard package, which can vary but often comes in a DPAK or similar format, usually featuring three primary pins and a larger tab or slug for heat dissipation. The pin count for the BSC014N04LSIATMA1 is typically three, corresponding to the standard MOSFET terminal configuration: Gate (G), Drain (D), and Source (S). The tab or slug often serves as an additional connection point to the Drain, primarily for heat dissipation purposes.
This MOSFET is used in various applications, including DC-DC converters, power management systems, and other circuits requiring efficient switching. It offers a low on-state resistance, enhancing energy efficiency and supporting higher current capabilities. The BSC014N04LSIATMA1 is commonly employed in automotive, industrial, and consumer electronics for its reliability and performance.
This specific MOSFET is typically housed in a standard package, which can vary but often comes in a DPAK or similar format, usually featuring three primary pins and a larger tab or slug for heat dissipation. The pin count for the BSC014N04LSIATMA1 is typically three, corresponding to the standard MOSFET terminal configuration: Gate (G), Drain (D), and Source (S). The tab or slug often serves as an additional connection point to the Drain, primarily for heat dissipation purposes.
This MOSFET is used in various applications, including DC-DC converters, power management systems, and other circuits requiring efficient switching. It offers a low on-state resistance, enhancing energy efficiency and supporting higher current capabilities. The BSC014N04LSIATMA1 is commonly employed in automotive, industrial, and consumer electronics for its reliability and performance.
Manufacturer
The BSC014N04LSIATMA1 is a product manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in producing a wide range of semiconductor solutions. The company focuses on automotive, industrial power control, power management and multimarket, and digital security solutions. Infineon is well-known for its innovations in energy efficiency, mobility, and security technologies, making it a key player in the global semiconductor industry.
Application
The BSC014N04LSIATMA1 is a N-channel MOSFET used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Management: Used in power supply units, DC-DC converters, and voltage regulation.
2. Automotive Systems: Helps in managing power in electric vehicles and other automotive electronics.
3. Industrial Electronics: Employed in motor drives, inverters, and control systems.
4. Consumer Electronics: Utilized in devices such as TVs, computers, and home appliances.
5. Telecommunications: Assists in power regulation for communication infrastructure.
Its low on-resistance and fast switching capabilities make it suitable for applications demanding high efficiency and compact design.
1. Power Management: Used in power supply units, DC-DC converters, and voltage regulation.
2. Automotive Systems: Helps in managing power in electric vehicles and other automotive electronics.
3. Industrial Electronics: Employed in motor drives, inverters, and control systems.
4. Consumer Electronics: Utilized in devices such as TVs, computers, and home appliances.
5. Telecommunications: Assists in power regulation for communication infrastructure.
Its low on-resistance and fast switching capabilities make it suitable for applications demanding high efficiency and compact design.
Package
The package type for the part number BSC014N04LSIATMA1 is a TO-263. This is a surface-mount package commonly used for high-power components like MOSFETs, offering efficient heat dissipation and ease of mounting on PCBs.
