BSC109N10NS3G

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BSC109N10NS3G

+БОМ

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #BSC109N10NS3G

  • В наличии8131

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Manufacturer Infineon Technologies
Package / Case PDFN-8(5.2x6.2)
Operating Temperature -55℃~+150℃
Rds(on) 10.9mΩ@10V,46A
Drain to Source Voltage (Vdss) 100V
Pd - Power Dissipation 78W
Current - Continuous Drain(Id) 63A
Reverse Transfer Capacitance (Crss @ Vds) 440pF@50V
Input Capacitance(Ciss @ Vds) 2.5nF@50V
Gate Threshold Voltage (Vgs(th) @ Id) 3.5V
Gate Charge(Qg) 35nC@10V
Number 1 N-channel

Обзор

Description

BSC109N10NS3G is an introductory course designed for students interested in the fundamentals of biological sciences. It typically covers key topics such as cell biology, genetics, evolution, and ecology, providing a comprehensive understanding of life processes and organisms. The course often incorporates both theoretical concepts and practical laboratory experiences, allowing students to apply their knowledge through experiments and observations.
Students will gain skills in scientific reasoning, critical thinking, and data analysis, which are essential for further studies in biology and related fields. The course may also emphasize the relevance of biological principles to real-world issues, such as environmental challenges and health sciences.
Overall, BSC109N10NS3G serves as a foundational course for those pursuing careers in healthcare, research, environmental science, and education, fostering a deeper appreciation for the complexity of life.

Equivalent

Equivalent products to the BSC109N10NS3G chip include the STP10NK80Z, IRF540, and FDPF10N10. These alternatives share similar electrical characteristics, such as voltage and current ratings. Always confirm specifications like V_DS, I_D, and R_DS(on) for compatibility in your specific application.

Features

The BSC109N10NS3G is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 90A, providing robust performance in demanding situations.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of about 10 mΩ, which reduces power losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching, suitable for applications like power management and DC-DC converters.
5. Thermal Performance: Features a TO-220 package that allows for effective heat dissipation, supporting higher power applications.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, allowing for easy driving with standard logic levels.
Overall, the BSC109N10NS3G is optimal for applications requiring high efficiency and reliability in power electronics.

Pinout

The BSC109N10NS3G is an N-channel MOSFET with a pin count of 3. It is designed for various power management applications. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows from the source to the drain when the device is active.
The BSC109N10NS3G is known for its low R_DS(on) and is suitable for applications requiring efficient switching.

Manufacturer

The BSC109N10NS3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in a wide range of semiconductor products and technologies, including power semiconductors, microcontrollers, sensors, and automotive electronics.
Infineon operates in various sectors, including automotive, industrial power control, power management, and security technologies. The BSC109N10NS3G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications, offering high efficiency and performance. The company's innovations are pivotal in enabling energy efficiency, smart mobility, and security solutions across various industries. Infineon is recognized for its commitment to sustainability and technological advancement, and it plays a significant role in the global semiconductor market.

Application

The BSC109N10NS3G is a N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and voltage regulation.
2. Switching Applications: Suitable for driving inductive loads in motor control and relay switching.
3. LED Drivers: Efficient in controlling LED lighting applications.
4. Audio Amplifiers: Employed in low-frequency audio and signal amplification.
5. Automotive Systems: Utilized in electric vehicle powertrains and battery management systems.
Its low RDS(on) and high efficiency make it ideal for energy-efficient designs in consumer electronics and industrial applications.

Package

The BSC109N10NS3G is packaged in a DPAK (TO-252) format. This package type features a surface-mount design, suitable for high-power applications due to its efficient thermal management capabilities.

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