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BSS138N
+БОМDIODE SIL SIC 60V 0.6A SOT-23
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ПроизводительAnalog Power Inc.
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Мфр. Часть #BSS138N
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В наличии4731
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.75V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 15 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
Обзор
Description
Key points:
- Type: N‑channel MOSFET (logic‑level gate).
- Typical specs: Vds ~50 V; Id ~0.1–0.18 A; Rds(on) a few ohms at Vgs ≈ 2.5–4.5 V; Vgs(th) ~0.6–1.5 V. Gate‑source max commonly around ±8 V (check the specific datasheet).
- Package: SOT‑23.
- Common uses: microcontroller IO switching, small‑signal switches, and I2C level shifters (often paired with pull‑ups to different voltages).
- How it works: Conducts when Vgs exceeds threshold; channel resistance connects D and S; includes an intrinsic body diode from source to drain.
- Tips: ensure Vds and Id meet your load, keep Vgs within max, and for I2C level shifting use the standard two‑pull‑up arrangement with the gate tied to the lower‑voltage side.
Pros: cheap, compact, readily available. Cons: limited current and higher Rds(on) than larger MOSFETs.
Equivalent
- 2N7002 (the most common substitute)
- Si2302 / Si2302A
- IRLML2502
- IRLML6344
In general, any low-threshold, 20–30 V N‑channel MOSFET in SOT‑23 with similar Id and Rdson can replace BSS138N (suitable for level shifting like I2C).
Features
- N‑channel enhancement MOSFET in a small SOT‑23 package.
- VDS: 50 V. ID: ≈ 180 mA (typical continuous drain current).
- RDS(on): ~3 Ω (typical) at VGS = 4.5 V; higher (≈6 Ω) at VGS = 2.5 V.
- Gate threshold: ~0.8–1.5 V (logic‑level device).
- Logic‑level gate drive: usable with 2.5–3.3 V logic, good for level‑shifters (e.g., I2C).
- Low gate charge and input capacitance for fast switching.
- Wide operating temperature range (typical: −55 °C to +125 °C).
- RoHS compliant, suitable for discrete switching and general purpose tasks.
- Common applications: level shifting, load switching, small‑signal switching, compact DC‑DС tasks.
Note: exact figures can vary by vendor; refer to the specific datasheet for precise numbers.
Pinout
- Function: N-channel enhancement-mode MOSFET (logic-level) in a SOT-23 package, used as a small-signal switch or level-shift device; gate controls conduction between drain and source (with a body diode from drain to source).
Manufacturer
- What kind of company: A US-based semiconductor manufacturer that designs and produces discrete devices (like transistors and MOSFETs) and integrated circuits; it was acquired by ON Semiconductor in 2016.
Application
- Bidirectional level shifting for open-drain buses (I2C) between different logic levels (e.g., 1.8V/3.3V/5V)
- Level translation for other open-drain interfaces (1-Wire, SMBus)
- Low-side switch for small-load applications in portable electronics (LEDs, sensors, microcontroller peripherals)
- General-purpose signal switching in compact PCB designs where a gate can be driven from a low voltage
Notes: suitable for low-current, space-constrained applications; check Vds, Id, and Rds(on) specs for your load.