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BSS214N H6327
+БОМMOSFETs N-Ch 20V 1.5A SOT-23-3
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Производителькомпанией Infineon Technologies
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Мфр. Часть #BSS214N H6327
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Лист данных BSS214N H6327 DataSheet
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В наличии18622
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | MouseReel |
| Standard Pack Qty | 3000 |
Обзор
Description
Key features (if a MOSFET):
- Type: N-channel
- Voltage/Current Ratings: Typically low to medium (e.g., 20V, 1–3A)
- Package: Likely SMD (e.g., SOT-23)
For precise details, consult the datasheet using the full part number, as variations exist. Common applications include load switching, amplification, or signal processing in compact electronics.
Features
- Voltage Rating: 20V (Drain-Source)
- Current Rating: 4.3A (Continuous Drain Current)
- Low On-Resistance: 28mΩ (max at VGS=4.5V)
- Gate Threshold Voltage: 0.7V (typical)
- Fast Switching: Low gate charge (9nC) for efficient performance
- Package: SOT-23 (small form factor, suitable for compact designs)
- Logic-Level Compatible: Fully enhanced at VGS=2.5V
- Low Power Loss: Optimized for power management in portable devices
Ideal for DC-DC converters, load switches, and battery protection circuits.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Source (S): Connected to the power supply (higher voltage for P-channel).
3. Drain (D): Connects to the load.
Key Features:
- -20V drain-source voltage (VDS).
- -3.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power switching, load control, and battery management.