BSS63LT1G

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BSS63LT1G

+БОМ

TRANS PNP 100V 0.1A SOT23-3

  • ПроизводительОнсеми

  • Мфр. Часть #BSS63LT1G

  • Лист данных BSS63LT1G DataSheet

  • Пакет TO-236-3

  • В наличии19573

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Спецификации

Атрибут Ценность
Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 250mV @ 2.5mA, 25mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 30 @ 25mA, 1V
Power-Max 225 mW
Frequency-Transition 95MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Обзор

Description

The BSS63LT1G is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for general-purpose switching applications. It is part of a family of semiconductor devices used for amplifying or switching electronic signals. This particular MOSFET is characterized by its low on-resistance and fast switching speed, making it efficient for use in low-power applications.
Key specifications include:
- Voltage Rating: Typically around 20V.
- Current Rating: Typically up to 300mA.
- RDS(on): Low on-state resistance, which helps in reducing power loss.
The BSS63LT1G is housed in a small SOT-23 package, which is suitable for surface-mount technology, making it ideal for compact circuit designs. It is commonly used in applications like load switching, signal processing, and other low-power electronic circuits. Its small form factor and efficient performance make it an attractive choice for designers looking to optimize space and energy efficiency in electronic devices.

Equivalent

The BSS63LT1G is an N-channel MOSFET, and its equivalents can include similar N-channel MOSFETs with comparable voltage, current, and package specifications. Some potential equivalents are:
1. 2N7002 - A popular SMD N-channel MOSFET.
2. BSS138 - Known for small-signal switching applications.
3. PMV20XN - Offers similar characteristics in a compact package.
Always verify parameters like Vds, Id, Rds(on), and package type to ensure compatibility with your specific application.

Features

The BSS63LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in electronic circuits for switching and amplification purposes. Here are some key features and specifications:
1. Type: N-channel MOSFET.
2. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of 50V.
3. Current Rating: The maximum continuous drain current (I_D) is usually around 115mA.
4. R_DS(on): It features a low on-state resistance, often around 6 ohms.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 0.8V to 2.1V.
6. Package: It is available in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
7. Applications: It is used in applications like load switching, signal processing, and small signal amplification.
8. Temperature Range: The operating temperature range is generally from -55°C to +150°C.
This MOSFET is valued for its efficiency and reliability in low-power applications. Always consult the datasheet for precise and detailed specification values.

Pinout

The BSS63LT1G is a small-signal N-channel MOSFET. It typically comes in a SOT-23 package, which has three pins. Here is a concise overview of the pin count and their functions:
1. Pin 1 (Gate): This is the gate terminal, which controls the MOSFET's conductivity. A voltage applied to this pin allows current to flow between the drain and the source.
2. Pin 2 (Source): This is the source terminal, where the current enters the MOSFET. For an N-channel MOSFET like the BSS63LT1G, it is usually connected to a lower voltage.
3. Pin 3 (Drain): This is the drain terminal, where the current exits the MOSFET. It is typically connected to a higher voltage compared to the source.
These pins enable the BSS63LT1G to function as a switch or amplifier in electronic circuits, frequently used for low-power applications.

Manufacturer

The BSS63LT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier that focuses on designing, manufacturing, and marketing a broad range of semiconductor components. The company specializes in energy-efficient solutions that enable energy conservation in various applications, including automotive, industrial, cloud, and Internet of Things (IoT). onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices, playing a crucial role in power management and connectivity solutions across diverse sectors.

Application

The BSS63LT1G is a small-signal MOSFET primarily used in applications that require efficient switching and amplification. Key application areas include:
1. Switching Circuits: Used in low-voltage, low-current switching applications.
2. Amplifiers: Suitable for signal amplification due to its low on-resistance.
3. Load Switches: Ideal for controlling power to different circuit segments.
4. Battery-Operated Devices: Fits well in portable devices due to its small size and low power consumption.
5. DC-DC Converters: Utilized in power management systems for voltage regulation.
6. Level Shifters: Helps in interfacing different voltage levels between components.
These characteristics make the BSS63LT1G versatile for various consumer electronics and industrial applications.

Package

The BSS63LT1G is a small-signal MOSFET that comes in a SOT-23 package type.

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