BSS84PH6327XTSA2

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BSS84PH6327XTSA2

+БОМ

MOSFET P-CH 60V 170MA SOT23-3

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #BSS84PH6327XTSA2

  • Лист данных BSS84PH6327XTSA2 DataSheet

  • Пакет SOT23-3

  • В наличии6512

365 Дни гарантии качества

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series SIPMOS®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 8Ohm @ 170mA, 10V
Vgs(th)(Max)@Id 2V @ 20µA
GateCharge(Qg)(Max)@Vgs 1.5 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 19 pF @ 25 V
PowerDissipation(Max) 360mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-SOT23

Обзор

Description

The BSS84PH6327XTSA2 is a P-channel enhancement-mode MOSFET from Infineon, designed for low-power applications. Key features include:
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low Threshold Voltage: -1V (typical)
- Low On-Resistance (RDS(on)): ~5Ω (at VGS = -10V)
- Compact Package: SOT-23 (3-pin), suitable for space-constrained designs
Common uses include load switching, power management, and signal amplification in portable electronics, IoT devices, and battery-powered systems. Its low leakage current and fast switching make it ideal for energy-efficient applications.
For detailed specs, refer to the Infineon datasheet.

Equivalent

Equivalent products to the BSS84PH6327XTSA2 (P-channel MOSFET, -50V, -0.13A, SOT-23) include:
- BSS84P (Infineon)
- DMG2305UX (Diodes Inc.)
- NDS356AP (ON Semiconductor)
- SI2305DS (Vishay)
These are similar in specs (voltage, current, package) and can serve as drop-in replacements. Always verify datasheets for exact compatibility.

Features

The BSS84PH6327XTSA2 is a P-channel MOSFET with the following key features:
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low On-Resistance (RDS(on)): ~1.5Ω (at VGS = -10V)
- Low Threshold Voltage (VGS(th)): -1V to -3V
- Low Power Consumption: Ideal for battery-powered applications
- Small Package: SOT-23 (3-pin), suitable for space-constrained designs
- Fast Switching Speed: Efficient for load switching and signal control
Common applications include power management, load switching, and signal amplification in portable electronics.

Pinout

The BSS84PH6327XTSA2 is a P-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the switching.
2. Source (S) – Connected to the higher voltage (for P-channel).
3. Drain (D) – Output terminal.
Key Features:
- Logic-level gate drive (suitable for low-voltage applications).
- Low threshold voltage (enhances efficiency in switching).
- Low on-resistance (RDS(on)) for reduced power loss.
Commonly used in load switching, power management, and signal amplification in portable electronics.

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