CMPA851A050F

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CMPA851A050F

+БОМ

50W, GAN MMIC POWER AMPLIFIER, 2

  • ПроизводительТехнологические решения MACOM

  • Мфр. Часть #CMPA851A050F

  • В наличии26056

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Part Status Active
Frequency 8.5GHz ~ 10.5GHz
Gain 29dB
RF Type Radar
Voltage - Supply 28V
Mounting Type Chassis Mount
Package / Case Module

Обзор

Description

CMPA851A050F is a part number that typically refers to a specific electronic component, most often a power amplifier module used in radio frequency (RF) applications. These components are commonly employed in telecommunication systems, broadcasting, and other wireless communication technologies. The "CMPA" prefix generally indicates that it is a Cree/Wolfspeed product, known for their high-performance gallium nitride (GaN) transistors, which offer advantages such as higher efficiency, broader bandwidth, and improved thermal management compared to traditional silicon-based transistors.
The "851A050F" portion of the part number usually provides specific information about the amplifier’s frequency range, power output, and other electrical characteristics. For instance, these components might be used in applications requiring operation in the 8.5 GHz range, with power outputs tailored for specific signal amplification needs.
In summary, CMPA851A050F is a GaN RF power amplifier module designed for high-frequency, high-efficiency applications, offering robust performance in demanding environments such as telecommunications infrastructure.

Equivalent

The CMPA851A050F is a GaN RF power amplifier by Wolfspeed. Equivalent products might include similar GaN RF power amplifiers from other manufacturers, such as:
1. Qorvo TGA2576-FL
2. MACOM MAPC-A1500
3. NXP's A3G550100W24S
Ensure that the specific technical requirements such as frequency range, power output, and efficiency match your application while considering equivalents. Always consult the datasheets for detailed specifications and compatibility.

Features

The CMPA851A050F is a high-performance GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) designed for RF and microwave power applications. Here are its key features:
1. Frequency Range: Operates efficiently over a frequency range of 8.5 GHz to 10.5 GHz, making it suitable for X-band applications.

2. Output Power: Delivers a high output power of 50 Watts, supporting high-power applications.
3. High Efficiency: Offers high efficiency, which reduces power consumption and enhances performance.
4. Gain: Provides a typical power gain of around 13 dB, indicating a strong amplification capability.
5. Thermal Management: Equipped with robust thermal management features, including a flange package that aids in heat dissipation.
6. Reliability: Built using GaN technology, known for its robustness and reliability, especially in demanding environments.
7. Package Type: Available in a compact, flange-mount package, facilitating easy integration into systems.
8. Applications: Ideal for use in radar systems, communication transmitters, and other high-frequency applications.
These features make the CMPA851A050F suitable for demanding RF applications that require high power and efficiency.

Pinout

The CMPA851A050F is a GaN High Electron Mobility Transistor (HEMT) designed for RF applications. It typically comes in a package with a pin count of 3, commonly referred to as a flange package. The primary function of this device is to amplify RF signals, and it is specifically designed for high-power applications, often in the frequency range of 8.5 to 11 GHz. This makes it suitable for use in defense, aerospace, and communication systems, where high efficiency and high power density are crucial. The device's pins are typically designated for gate, drain, and source connections, which are standard for transistors in RF and microwave applications, facilitating the control and amplification of high-frequency signals.

Manufacturer

The CMPA851A050F is manufactured by Wolfspeed, Inc. Wolfspeed is a company specializing in the development and production of wide bandgap semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN) technologies. These materials are used to produce devices that are more efficient and capable of operating at higher voltages, temperatures, and frequencies compared to traditional silicon-based semiconductors. Wolfspeed’s products are commonly used in applications such as power electronics, radio frequency (RF) devices, and lighting, serving industries like automotive, telecommunications, energy, and aerospace. The focus on SiC and GaN positions Wolfspeed as a leading player in the market for high-performance semiconductor solutions aimed at improving system efficiency and reducing energy consumption.

Application

The CMPA851A050F is a high-power RF amplifier transistor designed for use in wireless communications. Its application areas include:
1. Telecommunications: Used in base stations and network infrastructure for mobile communications.
2. Broadcasting: Supports TV and radio transmission systems.
3. Radar Systems: Employed in military and civil radar technologies.
4. Industrial RF: Suitable for RF heating and plasma generation.
5. Scientific Research: Utilized in particle accelerators and other research facilities requiring high RF power.
These applications leverage its ability to deliver high power with efficiency, stability, and reliability across various frequencies.

Package

The CMPA851A050F is typically a high-performance RF power amplifier module. However, for specific details about its package type, you'd need to refer to the manufacturer's datasheet or documentation, as the package type can vary. Common types for such components include surface-mount and through-hole packages.

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