Спецификации
| Атрибут | Ценность |
| Package | Tray |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 12V ~ 18V |
| Current-PeakOutput(SourceSink) | 10A, 10A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 1700 V |
| OperatingTemperature | -40°C ~ 125°C (TA) |
| Package/Case | Module |
