Спецификации
| Атрибут | Ценность |
| Supplier | CISSOID |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 450A |
| Rds On(Max) @ Id Vgs | 3.25mOhm @ 300A |
| Gate Charge(Qg)(Max) @ Vgs | 295nC @ 15V |
| Input Capacitance(Ciss)(Max) @ Vds | 30000pF @ 600V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |