D9LVRA2IDEMR

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D9LVRA2IDEMR

+БОМ

IC TRANSCEIVER 0/2 8WSON

  • ПроизводительТехасские инструменты

  • Мфр. Часть #D9LVRA2IDEMR

  • Лист данных D9LVRA2IDEMR DataSheet

  • В наличии28457

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
PartStatus Active
Type Receiver
Protocol LVDS
NumberofDrivers/Receivers 0/2
ReceiverHysteresis 40 mV
DataRate 600Mbps
Voltage-Supply 1.62V ~ 1.98V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-WFDFN
SupplierDevicePackage 8-WSON (2x2)

Обзор

Equivalent

The D9LVRA2IDEMR is a low-voltage DDR3L SDRAM chip from Micron. Equivalent alternatives include:
- Samsung: K4B2G1646F-BYMA
- SK Hynix: H5TC2G63FFR-PBA
- Nanya: NT5CC256M16EP-EK
These are 2Gb (256Mx16) DDR3L chips with similar specs (1.35V, 1600MHz). Verify pin compatibility and timing parameters for exact replacements. Always cross-check datasheets for your specific application.

Manufacturer

The D9LVRA2IDEMR is a memory chip manufactured by Micron Technology, a leading American semiconductor company specializing in memory and storage solutions. Micron produces DRAM, NAND flash, and other advanced memory technologies used in computing, consumer electronics, and enterprise applications.
Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers globally, competing with companies like Samsung and SK Hynix. The D9LVRA2IDEMR is part of Micron’s product lineup, likely used in high-performance systems.
For exact specifications, refer to Micron’s official datasheets or product documentation.

Package

The package type for D9LVRA2IDEMR is likely a BGA (Ball Grid Array) or LGA (Land Grid Array), common for memory or IC chips. For precise details, refer to the manufacturer's datasheet or part number documentation, as package codes can vary by supplier. Example: Samsung uses similar codes for BGA-packaged memory chips. Confirm with vendor specs.

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