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DGD2190MS8-13
+БОМIC GATE DRV HALF-BRIDGE 8SO 2.5K
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ПроизводительВключенные диоды
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Мфр. Часть #DGD2190MS8-13
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Лист данных DGD2190MS8-13 DataSheet
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Пакет SOIC-8
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В наличии2801
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 4.5A, 4.5A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 25ns, 20ns |
| OperatingTemperature | -40°C ~ 125°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
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Equivalent
1. IR2110 from Infineon Technologies - a high-voltage, high-speed power MOSFET and IGBT driver.
2. UCC27714 from Texas Instruments - a high-side and low-side gate driver.
3. FAN7390 from ON Semiconductor - a half-bridge gate driver.
Ensure compatibility by checking the specific requirements such as voltage, current ratings, and package type before substituting.
Features
1. Dual Output Channels: It provides two low-side gate drivers, allowing for efficient control of two power transistors simultaneously.
2. Bootstrap Operation: The device supports bootstrap operation, enabling high-side drive capability, which is crucial for driving the high-side MOSFETs in half-bridge or full-bridge configurations.
3. Undervoltage Lockout (UVLO): It ensures safe operation by preventing the gate driver from turning on if the supply voltage is below a specified threshold.
4. High-Speed Operation: Capable of driving MOSFETs and IGBTs with fast switching times, which is essential for high-frequency applications.
5. Wide Supply Voltage Range: Supports a broad range of supply voltages, enhancing versatility for different circuit requirements.
6. Protection Features: Includes built-in protection mechanisms such as over-temperature and short-circuit protection to ensure reliability and safety.
7. Compact Package: Available in a small MSOP-8 package, facilitating easy integration into compact designs.
These features make the DGD2190MS8-13 suitable for applications in power management, motor drives, and DC-DC converters.
Pinout
1. VCC: Supply voltage for the IC.
2. HIN: High-side input.
3. LIN: Low-side input.
4. COM: Common ground reference.
5. LO: Low-side output for the low-side MOSFET.
6. VS: High-side floating supply return.
7. HO: High-side output for the high-side MOSFET.
8. VB: High-side floating supply.
The DGD2190MS8-13 is designed for robustness, providing logic input compatibility with standard TTL and CMOS levels, and supports operating voltages up to 600V. Additionally, it features undervoltage lockout protection and has a built-in dead time to prevent shoot-through.