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DMG1012T-7
+БОМMOSFET N-CH 20V 630MA SOT-523
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ПроизводительВключенные диоды
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Мфр. Часть #DMG1012T-7
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Лист данных DMG1012T-7 DataSheet
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Пакет SOT-523-3
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В наличии6439
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 630mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 400mOhm @ 600mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.74 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| InputCapacitance(Ciss)(Max)@Vds | 60.67 pF @ 16 V |
| PowerDissipation(Max) | 280mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-523 |
Обзор
Description
The DMG1012T-7 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (RDS(on)), high current handling capability, and fast switching speeds, making it ideal for DC-DC converters, motor control, and load switching.
Key Specifications:
- Voltage Rating: 30V
- Continuous Drain Current (ID): 60A
- RDS(on): 1.8mΩ (max at VGS=10V)
- Package: TO-252 (DPAK)
Its compact package and efficient thermal performance ensure reliability in space-constrained designs. The DMG1012T-7 is commonly used in automotive, industrial, and consumer electronics for energy-efficient power solutions.
Equivalent
- SI2301DS-T1-E3 (Vishay)
- AO3401A (Alpha & Omega)
- FDN340P (ON Semiconductor)
- BSS84 (Infineon/NXP)
These alternatives offer similar specifications (e.g., -20V, -1.2A) and SOT-23 packaging. Verify exact parameters for your application.
Features
- Voltage Rating: 30V
- Current Rating: 6.5A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Fast Switching Speed: Suitable for high-efficiency applications
- Package: SOT-23 (Compact & space-saving)
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power management, load switching, DC-DC converters, and battery protection.
It is designed for low-voltage, high-efficiency circuits.
Pinout
### Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain 1 (D1) – Drain terminal for the first MOSFET.
4. Drain 2 (D2) – Drain terminal for the second MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
6. Gate 2 (G2) – Controls the second MOSFET.
### Key Features:
- Low threshold voltage (suitable for low-power applications).
- Compact SOT-363 package (space-saving).
- Dual independent MOSFETs for switching or amplification.
Commonly used in portable electronics, power management, and signal switching.
Manufacturer
Diodes Incorporated specializes in producing high-quality discrete, analog, and mixed-signal semiconductors for applications in consumer electronics, computing, communications, industrial, and automotive markets. Known for cost-effective and reliable components, the company serves a broad range of industries with a focus on power management and signal integrity solutions.
The DMG1012T-7 is commonly used in power switching applications due to its low on-resistance and compact footprint.
