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DMN26D0UT-7
+БОМMOSFET N-CH 20V 230MA SOT523
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ПроизводительВключенные диоды
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Мфр. Часть #DMN26D0UT-7
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Лист данных DMN26D0UT-7 DataSheet
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В наличии29396
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 230mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.2V, 4.5V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 100mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 14.1 pF @ 15 V |
| Power Dissipation (Max) | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-523 |
Обзор
Description
The DMN26D0UT-7 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic applications that require efficient switching and amplification. It is produced by Diodes Incorporated and is commonly used in power management circuits, load switches, and DC-DC converters.
Key features of the DMN26D0UT-7 include its low on-resistance, which reduces power loss and increases efficiency in electronic circuits. It operates at a low gate-source voltage, making it suitable for battery-powered devices. The device is housed in a compact SOT-363 package, allowing for space-saving designs in compact electronic devices. Its dual MOSFET configuration allows for more versatile circuit design, enabling the control of two separate circuits with a single package.
Overall, the DMN26D0UT-7 is valued for its efficiency, compactness, and reliability, making it a popular choice in various consumer electronics, industrial applications, and automotive systems.
Key features of the DMN26D0UT-7 include its low on-resistance, which reduces power loss and increases efficiency in electronic circuits. It operates at a low gate-source voltage, making it suitable for battery-powered devices. The device is housed in a compact SOT-363 package, allowing for space-saving designs in compact electronic devices. Its dual MOSFET configuration allows for more versatile circuit design, enabling the control of two separate circuits with a single package.
Overall, the DMN26D0UT-7 is valued for its efficiency, compactness, and reliability, making it a popular choice in various consumer electronics, industrial applications, and automotive systems.
Equivalent
The DMN26D0UT-7 is a dual N-channel MOSFET. Equivalent products include:
1. BSS138 by Nexperia or ON Semiconductor
2. 2N7002 by NXP Semiconductors or Vishay
3. SI2302 by Vishay
4. IRLML6344 by Infineon Technologies
These equivalents may differ in some specifications, so it's important to verify parameters like threshold voltage, drain current, and package compatibility for specific applications.
1. BSS138 by Nexperia or ON Semiconductor
2. 2N7002 by NXP Semiconductors or Vishay
3. SI2302 by Vishay
4. IRLML6344 by Infineon Technologies
These equivalents may differ in some specifications, so it's important to verify parameters like threshold voltage, drain current, and package compatibility for specific applications.
Features
The DMN26D0UT-7 is a dual N-channel MOSFET transistor. Here are its key features:
1. Dual N-Channel: It contains two N-channel MOSFETs in a single package, making it efficient for use in power management applications.
2. Low On-Resistance: It features low on-state resistance, which minimizes power loss and increases efficiency in electronic circuits.
3. Compact Package: The MOSFET is housed in a small SOT-363 package, suitable for space-constrained applications.
4. High-Speed Switching: It supports fast switching speeds, ideal for applications requiring rapid on/off control.
5. Drain-Source Voltage (V_DS): The maximum voltage between the drain and source is typically around 20V.
6. Continuous Drain Current (I_D): Supports a continuous drain current, often up to several hundred milliamperes, depending on specific conditions.
7. Thermal Performance: Designed to handle thermal dissipation efficiently, ensuring reliable performance under load.
8. Applications: Commonly used in DC-DC converters, load switches, and power management in portable and battery-operated devices.
These features make the DMN26D0UT-7 suitable for efficient power management solutions in compact electronic devices.
1. Dual N-Channel: It contains two N-channel MOSFETs in a single package, making it efficient for use in power management applications.
2. Low On-Resistance: It features low on-state resistance, which minimizes power loss and increases efficiency in electronic circuits.
3. Compact Package: The MOSFET is housed in a small SOT-363 package, suitable for space-constrained applications.
4. High-Speed Switching: It supports fast switching speeds, ideal for applications requiring rapid on/off control.
5. Drain-Source Voltage (V_DS): The maximum voltage between the drain and source is typically around 20V.
6. Continuous Drain Current (I_D): Supports a continuous drain current, often up to several hundred milliamperes, depending on specific conditions.
7. Thermal Performance: Designed to handle thermal dissipation efficiently, ensuring reliable performance under load.
8. Applications: Commonly used in DC-DC converters, load switches, and power management in portable and battery-operated devices.
These features make the DMN26D0UT-7 suitable for efficient power management solutions in compact electronic devices.
Pinout
The DMN26D0UT-7 is a N-channel enhancement mode MOSFET. It typically comes in a small, surface-mount package, such as a SOT-523, which has a 3-pin configuration. The functions of these pins are generally as follows:
1. Gate (G): This is the control pin used to turn the MOSFET on or off.
2. Drain (D): This pin is where the current flows out of the transistor. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the pin where the current enters the MOSFET from the external circuit.
These types of MOSFETs are commonly used for switching and amplification in electronic circuits, thanks to their efficiency and small size.
1. Gate (G): This is the control pin used to turn the MOSFET on or off.
2. Drain (D): This pin is where the current flows out of the transistor. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the pin where the current enters the MOSFET from the external circuit.
These types of MOSFETs are commonly used for switching and amplification in electronic circuits, thanks to their efficiency and small size.
Manufacturer
The DMN26D0UT-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company serves a broad range of customers in various sectors, including consumer electronics, computing, communications, industrial, and automotive markets. Diodes Incorporated is known for providing innovative semiconductor solutions that enable advancements in electronic devices and systems.
Application
The DMN26D0UT-7 is a MOSFET transistor commonly used in various electronic applications. Its primary application areas include power management systems, load switching, and DC-DC converters due to its low on-resistance and fast switching capabilities. It is also suitable for use in consumer electronics, automotive circuits, and industrial controls where efficient power handling and compact size are required. Additionally, it can be utilized in battery-powered devices and communication equipment for enhancing energy efficiency and performance.
Package
The DMN26D0UT-7 is a MOSFET transistor housed in a SOT-323 package, also known as SC-70. This is a small surface-mount package designed for use in compact electronic devices.
