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Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
Обзор
Description
DS1245Y-70IND+ is Dallas/Maxim’s battery-backed nonvolatile RAM (NVSRAM) with an integrated real-time clock (RTC). It combines memory storage with timekeeping so data stays intact and time stamps are preserved across power losses, making it ideal for embedded/industrial apps.
Key points:
- NVSRAM plus RTC and calendar
- Battery-backup operation for data retention
- Industrial-temperature option (IND+), suitable for harsh environments
- Supported by a simple serial/parallel interface (per variant) and common microcontroller buses
- Typical voltages and timing as specified in the datasheet; packaging variants available
Common uses:
- Firmware/config storage and time stamping
- Data logging and event logging in embedded/industrial systems
- BIOS-like configuration retention
Note:
- The DS1245Y-70IND+ family includes multiple densities and packaging options. For exact memory size, voltage, timing, and interface details, consult the latest datasheet and supplier specifications.
Key points:
- NVSRAM plus RTC and calendar
- Battery-backup operation for data retention
- Industrial-temperature option (IND+), suitable for harsh environments
- Supported by a simple serial/parallel interface (per variant) and common microcontroller buses
- Typical voltages and timing as specified in the datasheet; packaging variants available
Common uses:
- Firmware/config storage and time stamping
- Data logging and event logging in embedded/industrial systems
- BIOS-like configuration retention
Note:
- The DS1245Y-70IND+ family includes multiple densities and packaging options. For exact memory size, voltage, timing, and interface details, consult the latest datasheet and supplier specifications.
Features
DS1245Y-70IND+ is a battery-backed, nonvolatile SRAM with built-in timekeeping. Key features:
- 4K x 8 (_NVSRAM_) with real-time clock/calendar
- Speed grade: 70 ns access time (suffix -70)
- 5V operation; TTL-compatible I/O
- VBAT backup input for external 3V battery (battery-backed data retention during power loss)
- Power-fail detect and automatic data integrity on transitions
- Unlimited write endurance (SRAM-like writes; no EEPROM wear-out)
- Write protection via WP input
- Industrial temperature range: -40°C to +85°C (IND+), RoHS/lead-free packaging
- Parallel 8-bit data bus; standard 28-pin package (DIP/SOIC variants)
Applications: embedded systems, industrial controls, and automotive electronics requiring fast, reliable, nonvolatile RAM with timekeeping.
- 4K x 8 (_NVSRAM_) with real-time clock/calendar
- Speed grade: 70 ns access time (suffix -70)
- 5V operation; TTL-compatible I/O
- VBAT backup input for external 3V battery (battery-backed data retention during power loss)
- Power-fail detect and automatic data integrity on transitions
- Unlimited write endurance (SRAM-like writes; no EEPROM wear-out)
- Write protection via WP input
- Industrial temperature range: -40°C to +85°C (IND+), RoHS/lead-free packaging
- Parallel 8-bit data bus; standard 28-pin package (DIP/SOIC variants)
Applications: embedded systems, industrial controls, and automotive electronics requiring fast, reliable, nonvolatile RAM with timekeeping.
Pinout
- Pin count: 28-pin package (28-lead DIP/SOIC)
- Function: A non-volatile SRAM with an integrated real-time clock/calendar and battery backup. Provides timekeeping plus data storage (RAM) that is retained when main power is off; accessed via a bidirectional data bus with address, CS, WE/RE signals, plus VBAT for backup.
- Function: A non-volatile SRAM with an integrated real-time clock/calendar and battery backup. Provides timekeeping plus data storage (RAM) that is retained when main power is off; accessed via a bidirectional data bus with address, CS, WE/RE signals, plus VBAT for backup.
Manufacturer
- Manufacturer: Dallas Semiconductor (DS).
- What kind of company: A semiconductor company that designs and manufactures integrated circuits, including memory devices; the Dallas brand is now part of Maxim Integrated (and Analog Devices).
- What kind of company: A semiconductor company that designs and manufactures integrated circuits, including memory devices; the Dallas brand is now part of Maxim Integrated (and Analog Devices).
Application
DS1245Y-70IND+ is a battery-backed NVSRAM with an integrated RTC (industrial-grade). Primary application areas:
- Industrial automation and PLCs (time-stamped data, retained parameters)
- Data acquisition and logging (sensor data, fault/event logs)
- Embedded systems needing persistent configuration, calibration data, and firmware history
- Networking/telecom equipment for nonvolatile config and logs
- Medical devices requiring durable, time-stamped data retention
- Portable/remote equipment where power loss must not erase memory
Note: Its RTC and nonvolatile memory suit any application needing data preservation with accurate time reference across power outages.
- Industrial automation and PLCs (time-stamped data, retained parameters)
- Data acquisition and logging (sensor data, fault/event logs)
- Embedded systems needing persistent configuration, calibration data, and firmware history
- Networking/telecom equipment for nonvolatile config and logs
- Medical devices requiring durable, time-stamped data retention
- Portable/remote equipment where power loss must not erase memory
Note: Its RTC and nonvolatile memory suit any application needing data preservation with accurate time reference across power outages.
Package
8-pin plastic DIP (DIP-8), industrial grade (IND+).
