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FDB14N30TM
+БОМMOSFET N-CH 300V 14A D2PAK
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ПроизводительОнсеми
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Мфр. Часть #FDB14N30TM
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Лист данных FDB14N30TM DataSheet
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Пакет SC-70
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В наличии7358
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | UniFET™ |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain(Id) @ 25°C | 14A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 290mOhm @ 7A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1060 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Обзор
Description
The FDB14N30TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for switching and amplification purposes. This device is designed to handle high voltages and currents, making it suitable for power management in various circuits.
Key features of the FDB14N30TM include:
1. Voltage and Current Ratings: It is typically rated for a maximum drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) of around 14A, allowing for substantial power handling.
2. R_DS(on): The device has a low on-resistance, which minimizes power loss and improves efficiency when the MOSFET is in the 'on' state.
3. Thermal Performance: It is designed to dissipate heat efficiently, often housed in a TO-220 package, which aids in thermal management.
4. Applications: It is widely used in power supply circuits, motor drivers, inverters, and other applications requiring robust and efficient power switching.
Overall, the FDB14N30TM is valued for its reliability in high-power electronic designs.
Key features of the FDB14N30TM include:
1. Voltage and Current Ratings: It is typically rated for a maximum drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) of around 14A, allowing for substantial power handling.
2. R_DS(on): The device has a low on-resistance, which minimizes power loss and improves efficiency when the MOSFET is in the 'on' state.
3. Thermal Performance: It is designed to dissipate heat efficiently, often housed in a TO-220 package, which aids in thermal management.
4. Applications: It is widely used in power supply circuits, motor drivers, inverters, and other applications requiring robust and efficient power switching.
Overall, the FDB14N30TM is valued for its reliability in high-power electronic designs.
Equivalent
The FDB14N30TM is an N-channel MOSFET. Equivalent products with similar specifications might include:
1. IRF9530N
2. STP30NF10
3. IPP50R250
4. NTD4906N
5. FDPF12N50
These equivalents offer similar voltage, current ratings, and package types. Always verify the specific electrical characteristics and thermal performance to ensure compatibility for your application.
1. IRF9530N
2. STP30NF10
3. IPP50R250
4. NTD4906N
5. FDPF12N50
These equivalents offer similar voltage, current ratings, and package types. Always verify the specific electrical characteristics and thermal performance to ensure compatibility for your application.
Features
The FDB14N30TM is a N-channel MOSFET produced by ON Semiconductor, designed for switching applications. Key features include:
1. Voltage and Current Ratings: The MOSFET supports a drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) of approximately 14A, making it suitable for high-power applications.
2. R_DS(on): It offers a low on-resistance, improving efficiency by minimizing power loss during operation.
3. Package Type: Available in TO-263 package, which provides good thermal performance and ease of mounting on a PCB.
4. Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically around 2V to 4V, which is beneficial for interfacing with low-voltage control circuits.
5. Temperature Range: It operates effectively over a wide temperature range, enhancing reliability in various environments.
6. Fast Switching: The MOSFET is capable of fast switching speeds, suitable for applications requiring rapid on-off cycles.
These features make the FDB14N30TM ideal for use in power supply, motor control, and other high-efficiency power management applications.
1. Voltage and Current Ratings: The MOSFET supports a drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) of approximately 14A, making it suitable for high-power applications.
2. R_DS(on): It offers a low on-resistance, improving efficiency by minimizing power loss during operation.
3. Package Type: Available in TO-263 package, which provides good thermal performance and ease of mounting on a PCB.
4. Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically around 2V to 4V, which is beneficial for interfacing with low-voltage control circuits.
5. Temperature Range: It operates effectively over a wide temperature range, enhancing reliability in various environments.
6. Fast Switching: The MOSFET is capable of fast switching speeds, suitable for applications requiring rapid on-off cycles.
These features make the FDB14N30TM ideal for use in power supply, motor control, and other high-efficiency power management applications.
Pinout
The FDB14N30TM is an N-channel MOSFET. It typically features three pins: Gate (G), Drain (D), and Source (S). The main functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET's operation. By applying a voltage to the gate, it allows the flow of current between the drain and the source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the 'on' state. It is connected to the positive side of the load.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit, completing the circuit path for the current flowing from drain to source.
This MOSFET is commonly used in power switching applications due to its capability to handle high voltages and currents.
1. Gate (G): This pin controls the MOSFET's operation. By applying a voltage to the gate, it allows the flow of current between the drain and the source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the 'on' state. It is connected to the positive side of the load.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit, completing the circuit path for the current flowing from drain to source.
This MOSFET is commonly used in power switching applications due to its capability to handle high voltages and currents.
Manufacturer
The FDB14N30TM is manufactured by ON Semiconductor. ON Semiconductor is a leading global supplier of semiconductor-based solutions, providing a comprehensive portfolio of energy-efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. The company focuses on automotive, industrial, cloud, medical, and aerospace/defense applications. Known for its commitment to quality and sustainability, ON Semiconductor serves a broad range of industries by offering innovative solutions that help manage power more efficiently and reduce energy consumption.
Application
The FDB14N30TM is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Its key application areas include:
1. Switching Power Supplies: Used for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: Assists in controlling and driving electric motors in various industrial and consumer applications.
3. Lighting: Employed in LED drivers and lighting systems for efficient power handling.
4. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
5. Automotive Systems: Supports applications in electric and hybrid vehicles for power distribution and conditioning.
These applications benefit from the FDB14N30TM’s high efficiency and fast switching capabilities.
1. Switching Power Supplies: Used for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: Assists in controlling and driving electric motors in various industrial and consumer applications.
3. Lighting: Employed in LED drivers and lighting systems for efficient power handling.
4. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
5. Automotive Systems: Supports applications in electric and hybrid vehicles for power distribution and conditioning.
These applications benefit from the FDB14N30TM’s high efficiency and fast switching capabilities.
Package
The FDB14N30TM is a MOSFET that comes in a TO-263 package type. This package is also known as D²PAK, which is commonly used for surface mounting in power applications due to its capability to handle high power and provide efficient heat dissipation.
