FDB33N25TM

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FDB33N25TM

+БОМ

POWER FIELD-EFFECT TRANSISTOR, 3

  • ПроизводительКомпания Fairchild Semiconductor

  • Мфр. Часть #FDB33N25TM

  • Лист данных FDB33N25TM DataSheet

  • Пакет TO-263-3

  • В наличии3754

365 Дни гарантии качества

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Спецификации

Атрибут Ценность
Package / Case Bulk
Series UniFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain(Id) @ 25°C 33A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 94mOhm @ 16.5A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 48 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 2135 pF @ 25 V
Power Dissipation (Max) 235W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)

Обзор

Description

The FDB33N25TM is an N-channel MOSFET from ON Semiconductor, designed for high-power applications. Key features include:
- Voltage Rating: 250V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) at 10V VGS
- Fast Switching: Suitable for switching power supplies, motor control, and inverters
- Package: TO-252 (DPAK), offering good thermal performance
This MOSFET is optimized for efficiency in high-voltage, high-current circuits, making it ideal for industrial and automotive applications. Its robust design ensures reliable performance under demanding conditions.
For detailed specs, refer to the official datasheet.

Features

The FDB33N25TM is an N-channel MOSFET with the following key features:
- Voltage Rating: 250V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): Typically 85mΩ @ 10V VGS
- Fast Switching: Optimized for high-speed applications
- Power Dissipation: Up to 200W (with proper heat sinking)
- Package: TO-252 (DPAK), surface-mount design
- Gate Threshold Voltage (VGS(th)): 2-4V
- Avalanche Energy Rated: Improved ruggedness
Ideal for power switching in DC-DC converters, motor drives, and SMPS. Compact and efficient for high-current applications.

Pinout

The FDB33N25TM is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-252/DPAK package: Gate, Drain, Source)
- Function: Power switching in applications like DC-DC converters, motor control, and power supplies.
- Voltage Rating: 250V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): ~0.055Ω (typical at VGS=10V)
It is designed for high-efficiency switching and features fast switching speeds with low gate charge.

Application

The FDB33N25TM is a power MOSFET commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. LED Lighting – Powers high-efficiency LED drivers.
4. DC-DC Converters – Used in buck, boost, and buck-boost topologies.
5. Inverters – Converts DC to AC in solar and UPS systems.
Its high voltage (250V) and current (33A) ratings make it suitable for medium-to-high-power applications requiring fast switching and low on-resistance.

Package

The FDB33N25TM is a power MOSFET in a TO-263-3 (D2PAK) package. This surface-mount package offers high power dissipation and is commonly used in switching applications. It has three leads and a tab for thermal management. Suitable for high-current and high-voltage applications, such as power supplies and motor control.

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