Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 110A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.6mOhm @ 80A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 255 nC @ 10 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 8320 pF @ 20 V |
| Power Dissipation (Max) | 333W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Обзор
Description
The FDB9503L-F085 is a specific model of a power MOSFET transistor manufactured by ON Semiconductor, designed for use in automotive and other high-performance applications. This component is known for its efficiency and reliability in switching operations, making it suitable for use in power management systems. It is designed to handle high currents and voltages, featuring low on-resistance to minimize power loss and heat generation during operation.
Key features include its ability to operate at high temperatures and its robustness against harsh environmental conditions, which are critical for automotive applications. The FDB9503L-F085 is typically used in applications requiring efficient power conversion and management, such as in electric vehicle systems, power supplies, and DC-DC converters. It comes in a TO-220 package, which facilitates easy installation and effective heat dissipation.
Overall, the FDB9503L-F085 offers a combination of performance, durability, and efficiency, making it a preferred choice for engineers working on power electronics in demanding fields.
Key features include its ability to operate at high temperatures and its robustness against harsh environmental conditions, which are critical for automotive applications. The FDB9503L-F085 is typically used in applications requiring efficient power conversion and management, such as in electric vehicle systems, power supplies, and DC-DC converters. It comes in a TO-220 package, which facilitates easy installation and effective heat dissipation.
Overall, the FDB9503L-F085 offers a combination of performance, durability, and efficiency, making it a preferred choice for engineers working on power electronics in demanding fields.
Equivalent
The FDB9503L-F085 is a MOSFET transistor. Equivalent products with similar specifications might include the IRF540N, STP36NF06L, or the Vishay SiHP33N60E. These alternatives should be cross-referenced with datasheets to ensure compatibility in terms of voltage, current, and switching characteristics specific to your application. Always verify parameters like Rds(on), Vgs, and package type for compatibility.
Features
The FDB9503L-F085 is a power MOSFET from ON Semiconductor, designed for automotive applications. Key features include:
1. N-Channel MOSFET: It uses an N-channel enhancement mode, which is effective for high-speed switching.
2. High Voltage and Current Ratings: Suitable for high power applications, it offers robust performance with a voltage rating of around 40V and high continuous current capacity.
3. Low On-Resistance: It features low R_DS(on), which minimizes power losses during conduction and improves efficiency.
4. Thermal Performance: The device is designed for efficient heat dissipation, which is crucial for reliability under high load conditions.
5. Automotive Grade: It meets the AEC-Q101 standards, ensuring suitability for automotive applications requiring high reliability.
6. Compact Package: Typically available in a D2PAK package, providing a compact design suitable for space-constrained applications.
7. Wide Operating Temperature Range: The device operates efficiently across a broad temperature range, making it versatile for various environments.
These features make the FDB9503L-F085 a reliable choice for demanding automotive and industrial applications.
1. N-Channel MOSFET: It uses an N-channel enhancement mode, which is effective for high-speed switching.
2. High Voltage and Current Ratings: Suitable for high power applications, it offers robust performance with a voltage rating of around 40V and high continuous current capacity.
3. Low On-Resistance: It features low R_DS(on), which minimizes power losses during conduction and improves efficiency.
4. Thermal Performance: The device is designed for efficient heat dissipation, which is crucial for reliability under high load conditions.
5. Automotive Grade: It meets the AEC-Q101 standards, ensuring suitability for automotive applications requiring high reliability.
6. Compact Package: Typically available in a D2PAK package, providing a compact design suitable for space-constrained applications.
7. Wide Operating Temperature Range: The device operates efficiently across a broad temperature range, making it versatile for various environments.
These features make the FDB9503L-F085 a reliable choice for demanding automotive and industrial applications.
Pinout
The FDB9503L-F085 is a N-channel MOSFET produced by ON Semiconductor, specifically designed for automotive applications. It typically comes in a D2PAK package, which is also known as TO-263. The FDB9503L-F085 has a 3-pin configuration. The pins are generally assigned as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET by applying voltage to turn the device on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is the return path for the current flowing through the drain.
The FDB9503L-F085 is optimized for high-speed switching with low on-state resistance, making it suitable for power management and load-switching applications in vehicles. Its key specifications include a high temperature tolerance of up to 175°C, making it reliable under automotive conditions.
1. Gate (G): This pin is responsible for controlling the MOSFET by applying voltage to turn the device on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is the return path for the current flowing through the drain.
The FDB9503L-F085 is optimized for high-speed switching with low on-state resistance, making it suitable for power management and load-switching applications in vehicles. Its key specifications include a high temperature tolerance of up to 175°C, making it reliable under automotive conditions.
Manufacturer
The FDB9503L-F085 is manufactured by ON Semiconductor, a global semiconductor supplier. ON Semiconductor specializes in a broad range of semiconductor solutions, including power management, analog, sensors, logic, timing, connectivity, discrete, SoC (system on chip), and custom devices. The company provides products and solutions for automotive, industrial, cloud power, and IoT applications, among others. Its offerings are designed to improve power efficiency and enable energy-efficient innovations across a wide spectrum of electronics applications.
Application
The FDB9503L-F085 is a power MOSFET designed for high-efficiency power management applications. Its primary application areas include automotive systems, where it is used in powertrain control, electric and hybrid vehicle systems, and advanced driver assistance systems (ADAS). It is also applicable in industrial automation and motor control systems due to its ability to handle high current loads and enhance energy efficiency. Additionally, this MOSFET can be utilized in power supplies, DC-DC converters, and other consumer electronics that require reliable, high-speed switching performance. Its design focuses on reducing conduction and switching losses, which makes it suitable for applications demanding improved thermal performance and energy efficiency.
Package
The FDB9503L-F085 is a MOSFET transistor that typically comes in a TO-252 package, also known as a DPAK. This package type is designed for surface-mount applications, providing a compact and thermally efficient solution for high-power electronics.
