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FDC653N
+БОМMOSFET N-CH 30V 5A SUPERSOT6
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ПроизводительОнсеми
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Мфр. Часть #FDC653N
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Лист данных FDC653N DataSheet
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Пакет SOT-6
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В наличии5502
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 35mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 350 pF @ 15 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
Обзор
Description
Equivalent
Features
1. Type: It is an N-Channel MOSFET, which means it conducts when a positive voltage is applied to its gate terminal.
2. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_DS) of around 30V, and a continuous drain current (I_D) of approximately 9A, making it suitable for moderate power applications.
3. Low On-Resistance: The FDC653N is designed with low on-resistance, ensuring minimal power loss during operation, which is crucial for enhancing efficiency in power-sensitive applications.
4. Small Package: Typically available in surface-mount packages like SOIC, which is advantageous for compact design requirements.
5. Thermal Performance: It is engineered to provide effective thermal management, often featuring a low thermal resistance to maintain reliability under load.
These features make the FDC653N an excellent choice for applications in power management, motor control, and DC-DC converters in various electronic devices.
Pinout
1. Pin 1 (Gate): This is the gate terminal for both N-channel MOSFETs. It is used to control the ON/OFF state of the MOSFETs by applying a voltage.
2. Pin 2 (Source): This is the source terminal of the MOSFETs, where the current enters the device. It is typically connected to the ground or a lower potential in the circuit.
3. Pin 3 (Drain): This is the drain terminal, where the current exits the device. It is usually connected to the load in the circuit.
The FDC653N is commonly used in applications requiring efficient power management and switching, thanks to its low on-resistance and fast switching characteristics. Its small form factor makes it ideal for compact, space-constrained applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Manufacturer
Application
1. Power Supply Circuits: Utilized in DC-DC converters and power regulators for efficient voltage conversion and regulation.
2. Load Switching: Effective in controlling loads in both consumer electronics and industrial systems.
3. Battery Management: Used in battery protection and charging circuits to enhance battery life and performance.
4. Motor Control: Ideal for controlling small motors in applications like drones and robotics.
5. Signal Amplification: Employed in audio and RF amplification circuits.
The FDC653N is chosen for its compact size, low on-resistance, and fast switching capabilities.