FDD2572

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FDD2572

+БОМ

POWER FIELD-EFFECT TRANSISTOR, 4

  • ПроизводительОнсеми

  • Мфр. Часть #FDD2572

  • Лист данных FDD2572 DataSheet

  • В наличии23616

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 4A (Ta), 29A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 54mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 34 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1770 pF @ 25 V
Power Dissipation (Max) 135W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Обзор

Description

FDD2572 is likely a course code used at an academic institution, typically referring to an advanced or specialized course. While specific details about the course content can vary between institutions, such codes usually belong to a particular department or field of study, such as engineering, computer science, or business.
To understand what "Introduction to FDD2572" entails, you would generally expect the course to provide an overview of the subject matter it covers. This might include foundational theories, methodologies, and key concepts relevant to the field. The course is designed to familiarize students with the essential aspects of the topic, preparing them for more advanced studies or professional applications.
For precise information about FDD2572, including its specific subject focus, course objectives, prerequisites, and structure, you would need to consult the course syllabus or contact the academic department offering the course.

Equivalent

The FDD2572 is a N-channel MOSFET with specific electrical characteristics. Equivalent products with similar specifications might include the IRF540N from Infineon Technologies (formerly International Rectifier), the PSMN1R2-25YL from Nexperia, and the 2N7002 from ON Semiconductor. It's crucial to verify the specific requirements like voltage, current, and Rds(on) to ensure compatibility. Always consult the datasheets for precise equivalence.

Features

The FDD2572 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Here are some of its key features:
1. N-Channel MOSFET: Utilizes an N-channel for conducting electricity, which offers efficient switching performance.
2. Voltage and Current Ratings: Typically offers a drain-source voltage (V_DS) of up to 30 volts and a continuous drain current (I_D) of around 60 amperes, making it suitable for high-current applications.
3. R_DS(on): Features a low on-state resistance, which minimizes power loss and heat generation during operation.
4. Fast Switching Speed: Designed for high-speed operation, improving efficiency in switching applications.
5. Thermal Performance: Equipped with a robust package that provides effective thermal management and reliability.
6. Applications: Commonly used in power management, DC-DC converters, motor controllers, and other applications requiring efficient switching.
7. Package Type: Often available in a standard TO-220 package, facilitating easy integration into various circuit designs.
These features make the FDD2572 a versatile component for use in power electronics and high-performance switching applications.

Pinout

The FDD2572 is a power MOSFET transistor commonly used in electronic applications for switching and amplification. It comes in a DPAK (TO-252) package, which is a surface-mount configuration. The FDD2572 has three pins:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate determines whether the MOSFET is in an on or off state.
2. Drain (D): This pin is where the main current flows out of the transistor when it is in the conducting state. The drain is connected to the load in most circuit configurations.
3. Source (S): This pin serves as the return path for the current entering through the drain. The source is typically connected to the ground or the negative side of the power supply.
The FDD2572 is designed for high efficiency and fast switching, making it suitable for applications like power supplies, motor drives, and other high-frequency circuits.

Manufacturer

The FDD2572 is manufactured by ON Semiconductor, now known as onsemi. onsemi is a semiconductor supplier that focuses on energy-efficient electronics. The company provides a broad range of semiconductor solutions, including power and signal management, logic, discrete, and custom devices for various applications. They serve industries such as automotive, industrial, cloud power, and IoT. onsemi aims to advance sustainable energy technologies and smart power applications, contributing to more efficient energy usage and management.

Application

The FDD2572 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications due to its efficiency and reliability. Common application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power conversion.
2. Switching Applications: Essential in fast switching applications like motor drives and inverters.
3. Load Switching: Suitable for load switching in power distribution and protection circuits.
4. Consumer Electronics: Found in devices like televisions and audio systems for power supply regulation.
5. Automotive Systems: Utilized in electronic control units (ECUs) for efficient power handling.
Its low on-resistance and fast switching characteristics make it ideal for high-efficiency power management solutions.

Package

The FDD2572 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that typically comes in a TO-252 package type. This package is also known as the DPAK, which is designed for surface-mount technology (SMT). It provides efficient heat dissipation and is suitable for high-current applications.

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