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FDD2572
+БОМPOWER FIELD-EFFECT TRANSISTOR, 4
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ПроизводительОнсеми
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Мфр. Часть #FDD2572
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Лист данных FDD2572 DataSheet
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В наличии23616
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta), 29A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 54mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1770 pF @ 25 V |
| Power Dissipation (Max) | 135W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Обзор
Description
To understand what "Introduction to FDD2572" entails, you would generally expect the course to provide an overview of the subject matter it covers. This might include foundational theories, methodologies, and key concepts relevant to the field. The course is designed to familiarize students with the essential aspects of the topic, preparing them for more advanced studies or professional applications.
For precise information about FDD2572, including its specific subject focus, course objectives, prerequisites, and structure, you would need to consult the course syllabus or contact the academic department offering the course.
Equivalent
Features
1. N-Channel MOSFET: Utilizes an N-channel for conducting electricity, which offers efficient switching performance.
2. Voltage and Current Ratings: Typically offers a drain-source voltage (V_DS) of up to 30 volts and a continuous drain current (I_D) of around 60 amperes, making it suitable for high-current applications.
3. R_DS(on): Features a low on-state resistance, which minimizes power loss and heat generation during operation.
4. Fast Switching Speed: Designed for high-speed operation, improving efficiency in switching applications.
5. Thermal Performance: Equipped with a robust package that provides effective thermal management and reliability.
6. Applications: Commonly used in power management, DC-DC converters, motor controllers, and other applications requiring efficient switching.
7. Package Type: Often available in a standard TO-220 package, facilitating easy integration into various circuit designs.
These features make the FDD2572 a versatile component for use in power electronics and high-performance switching applications.
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate determines whether the MOSFET is in an on or off state.
2. Drain (D): This pin is where the main current flows out of the transistor when it is in the conducting state. The drain is connected to the load in most circuit configurations.
3. Source (S): This pin serves as the return path for the current entering through the drain. The source is typically connected to the ground or the negative side of the power supply.
The FDD2572 is designed for high efficiency and fast switching, making it suitable for applications like power supplies, motor drives, and other high-frequency circuits.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power conversion.
2. Switching Applications: Essential in fast switching applications like motor drives and inverters.
3. Load Switching: Suitable for load switching in power distribution and protection circuits.
4. Consumer Electronics: Found in devices like televisions and audio systems for power supply regulation.
5. Automotive Systems: Utilized in electronic control units (ECUs) for efficient power handling.
Its low on-resistance and fast switching characteristics make it ideal for high-efficiency power management solutions.