Изображения являются только для ссылки
FDD5612
+БОМMOSFET N-CH 60V 5.4A TO252-3
-
ПроизводительОнсеми
-
Мфр. Часть #FDD5612
-
В наличии6632
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 30 V |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD561 |
Обзор
Description
FDD5612 is a high-performance, dual-channel, synchronous buck regulator designed for efficient power conversion in various applications, particularly in portable devices and battery-powered systems. It features a compact, integrated design that minimizes the need for external components, making it ideal for space-constrained environments.
Key specifications include a wide input voltage range, typically from 4.5V to 20V, and the ability to deliver up to 2A of output current per channel. The device employs advanced control schemes to achieve high efficiency, fast transient response, and low output ripple.
Additionally, FDD5612 includes protection features such as overcurrent protection, thermal shutdown, and under-voltage lockout, ensuring reliable operation. Its flexibility allows for adjustable output voltage through external resistors, making it suitable for various applications, including consumer electronics, telecommunications, and industrial equipment. Overall, FDD5612 is a compact, efficient solution for modern power management needs.
Key specifications include a wide input voltage range, typically from 4.5V to 20V, and the ability to deliver up to 2A of output current per channel. The device employs advanced control schemes to achieve high efficiency, fast transient response, and low output ripple.
Additionally, FDD5612 includes protection features such as overcurrent protection, thermal shutdown, and under-voltage lockout, ensuring reliable operation. Its flexibility allows for adjustable output voltage through external resistors, making it suitable for various applications, including consumer electronics, telecommunications, and industrial equipment. Overall, FDD5612 is a compact, efficient solution for modern power management needs.
Equivalent
The FDD5612 is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include the following parts: FDD5610, FDD5611, BSS123, IRF730, and AO3400. Always verify specifications like voltage, current ratings, and R_DS(on) for compatibility before substitution.
Features
The FDD5612 is a dual N-channel MOSFET designed for various power applications. Key features include:
1. Low On-Resistance (Rds(on)): It offers low on-resistance, which minimizes power loss during operation, enhancing efficiency.
2. High Current Rating: Capable of handling high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Facilitates high-frequency operation, ideal for switch-mode power supplies and motor control circuits.
4. Voltage Ratings: Typically has a high drain-source voltage (Vds), providing safety margins for various applications.
5. Thermal Performance: Features a low thermal resistance, allowing for better heat dissipation and reliability.
6. Package Type: Available in compact surface-mount packages, which saves space on PCBs and simplifies circuit design.
7. Gate Threshold Voltage: Designed to operate at lower gate voltages, enhancing compatibility with low-voltage control signals.
These features make the FDD5612 suitable for automotive, industrial, and consumer electronics applications.
1. Low On-Resistance (Rds(on)): It offers low on-resistance, which minimizes power loss during operation, enhancing efficiency.
2. High Current Rating: Capable of handling high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Facilitates high-frequency operation, ideal for switch-mode power supplies and motor control circuits.
4. Voltage Ratings: Typically has a high drain-source voltage (Vds), providing safety margins for various applications.
5. Thermal Performance: Features a low thermal resistance, allowing for better heat dissipation and reliability.
6. Package Type: Available in compact surface-mount packages, which saves space on PCBs and simplifies circuit design.
7. Gate Threshold Voltage: Designed to operate at lower gate voltages, enhancing compatibility with low-voltage control signals.
These features make the FDD5612 suitable for automotive, industrial, and consumer electronics applications.
Pinout
The FDD5612 is a dual N-channel MOSFET in a DPAK package with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET, which is also connected to the common source of both MOSFETs.
This configuration allows for efficient switching and power management in various applications. For specifics on voltage and current ratings, refer to the manufacturer's datasheet.
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET, which is also connected to the common source of both MOSFETs.
This configuration allows for efficient switching and power management in various applications. For specifics on voltage and current ratings, refer to the manufacturer's datasheet.
Manufacturer
The FDD5612 is a power MOSFET manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a broad range of electronic components, particularly in the fields of power management, analog, and mixed-signal solutions. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor is known for its commitment to innovation and sustainability, producing products that help improve energy efficiency and performance in electronic systems. The FDD5612, as a part of their product lineup, is typically used in applications such as power supplies and motor control due to its high efficiency and reliability.
Application
The FDD5612 is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drivers, and power switching applications in computer and consumer electronics. Additionally, it is suitable for use in automotive systems, where efficient power conversion is crucial. Its low on-resistance and fast switching capabilities make it ideal for battery management systems and high-efficiency power supplies. Overall, the FDD5612 is widely utilized in any application requiring efficient power control and management.
Package
The FDD5612 is typically packaged in a TO-220 form factor, which is a commonly used package for power MOSFETs. This package design provides adequate thermal dissipation and facilitates easy mounting on heatsinks for improved performance in power applications.
