FDD5614P

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FDD5614P

+БОМ

MOSFET P-CH 60V 15A TO252

  • ПроизводительОнсеми

  • Мфр. Часть #FDD5614P

  • В наличии7213

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Series PowerTrench®
Part Status Obsolete
Base Product Number FDD5614
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 759 pF @ 30 V
Power Dissipation (Max) 3.8W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)

Обзор

Description

The FDD5614P is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor, typically used in electronic circuits for switching and amplification purposes. It features an N-channel configuration, meaning it allows current to flow when a voltage is applied to the gate terminal relative to the source terminal.
Key specifications of the FDD5614P include a maximum drain-source voltage (V_DS) of 40 volts and a continuous drain current (I_D) of up to 60 amps. Its low on-resistance (R_DS(on)) ensures efficient operation, reducing power loss and heat generation. The device is packaged in a Power56 package, which provides good thermal performance and compact size, making it suitable for space-constrained applications.
Common applications for the FDD5614P include power management systems, DC-DC converters, motor control, and other electronic devices requiring high efficiency and reliability. Its ability to handle significant current and voltage levels, along with its fast switching capabilities, makes it a popular choice in various industrial and consumer electronic applications.

Equivalent

The FDD5614P is a P-channel MOSFET used for power management applications. Equivalent products might include:
1. IRF9510 - A similar P-channel MOSFET.
2. SI4467DY - Another P-channel MOSFET with comparable specifications.
3. NDP6020P - A suitable replacement in similar applications.
4. AO3401 - A P-channel MOSFET that may serve as an alternative.
When selecting an equivalent, verify the specifications like voltage, current rating, and package type to ensure compatibility with your application.

Features

The FDD5614P is an N-channel MOSFET designed for various power management applications. Here are its key features:
1. Type and Technology: It's an N-channel MOSFET utilizing advanced trench technology for enhanced performance.
2. Voltage and Current Ratings: The device typically operates with a drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) of up to 80A, making it suitable for high-current applications.
3. On-resistance: It features a low on-resistance (R_DS(on)), minimizing power loss and improving efficiency in switching applications.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, which helps in reducing the power required to drive the MOSFET.
5. Package Type: The FDD5614P is commonly available in a PowerPack or similar package, offering efficient thermal performance, which is crucial for high-power applications.
6. Applications: It is typically used in DC-DC converters, motor control, and power management systems due to its robust performance and high efficiency.
These features make the FDD5614P a reliable choice for various demanding electronic applications.

Pinout

The FDD5614P is a P-channel MOSFET commonly used in electronic circuits. It typically comes in a standard package with the following pin configuration:
1. Pin Count: The FDD5614P has 3 pins.
2. Pin Functions:
- Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate terminal allows current to flow between the source and drain.
- Drain (D): This is the terminal through which the controlled current flows out of the MOSFET. It is connected to the load in a circuit.
- Source (S): This pin is connected to the ground or the negative side of the power supply in P-channel MOSFETs. Current flows into the MOSFET through the source.
The FDD5614P is utilized for switching applications and load driving, especially in circuits requiring high-speed switching and efficient power management. It features low on-state resistance, making it suitable for low-loss power applications.

Manufacturer

The FDD5614P is manufactured by ON Semiconductor, which is a multinational company specializing in semiconductor solutions. ON Semiconductor produces a wide range of products, including power and signal management, logic, discrete, and custom devices for the automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications markets.

Application

The FDD5614P is a P-channel MOSFET transistor commonly used in various electronic applications. Its primary application areas include power management systems, such as DC-DC converters and voltage regulation circuits. It is also used in load switching applications for its efficient switching capabilities. Additionally, the FDD5614P is suitable for battery-powered devices, motor control, and audio amplifiers due to its low on-resistance and high-speed switching characteristics. Its small footprint makes it ideal for compact electronic designs.

Package

The FDD5614P is a P-channel MOSFET typically available in a SO-8 package. This surface-mount package is commonly used for small-sized electronic applications, providing a compact solution for power management.

Frequently Asked Questions


Q: What is the maximum drain-source voltage for the FDD5614P?
A: The FDD5614P has a maximum drain-to-source voltage (Vdss) of 60V, suitable for medium-voltage P-Channel applications.


Q: What is the continuous drain current rating at 25°C?
A: It supports a continuous drain current (Id) of 15A at 25°C ambient temperature (Ta), ideal for power switching.


Q: What is the typical on-resistance (Rds(on)) for this P-Channel MOSFET?
A: The maximum Rds(on) is 100mOhm at Vgs=10V and Id=4.5A, ensuring efficient low-voltage operation.


Q: Can this device be driven by 4.5V logic levels?
A: Yes, it is rated for drive voltages of 4.5V and 10V, making it compatible with low-voltage gate drivers.


Q: What is the maximum power dissipation for the FDD5614P?
A: Power dissipation is 3.8W at ambient (Ta) and up to 42W at case (Tc) temperature, depending on thermal management.


Q: What package type does this component use?
A: It comes in a surface-mount TO-252-3 (DPAK) package, with supplier device package TO-252AA, supplied in tape and reel.


Q: What is the maximum operating junction temperature?
A: The operating temperature range is -55°C to 175°C (TJ), suitable for harsh industrial environments.


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