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FDD7N60NZTM
+БОМMOSFET N-CH 600V 5.5A DPAK
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ПроизводительОнсеми
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Мфр. Часть #FDD7N60NZTM
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Лист данных FDD7N60NZTM DataSheet
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Пакет DPAK-3
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В наличии2190
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | UniFET-II™ |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.25Ohm @ 2.75A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 730 pF @ 25 V |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Обзор
Description
### Key Features:
- Voltage Rating: 600V (Drain-Source)
- Current Rating: 7A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 1.2Ω (typ.)
- Fast Switching: Optimized for high-speed operation
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves ruggedness in inductive loads
- Package: TO-252 (DPAK), surface-mountable
### Applications:
- Switched-Mode Power Supplies (SMPS)
- DC-DC Converters
- Motor Control
- LED Lighting Drivers
This MOSFET is ideal for high-voltage, medium-current applications requiring low conduction losses and fast switching performance. Its robust design ensures reliability in demanding power electronics systems.
Equivalent
- STP7NK60ZFP (STMicroelectronics)
- IRF740 (Infineon)
- FQP7N60C (Fairchild/ON Semi)
- 7N60 (various brands like Vishay, Toshiba)
Check datasheets for exact specs like RDS(on), gate charge, and package compatibility before substitution.
Features
- Voltage Rating: 600V (drain-source, VDSS)
- Current Rating: 7A (continuous drain current, ID)
- Low On-Resistance: 1.2Ω (typical at VGS = 10V)
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss) for efficient performance
- Avalanche Energy Rated: Enhanced ruggedness for reliability
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, motor control, lighting, and other high-voltage switching circuits
This MOSFET is optimized for high efficiency and thermal performance in compact designs.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal (connected to the load).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)) for efficient power handling.
- Fast switching for power supply and motor control applications.
- Avalanche energy rated for robustness.
Common uses:
- Switching power supplies.
- DC-DC converters.
- Motor drives.
