Изображения являются только для ссылки
FDD86252
+БОМMOSFET N-CH 150V 5A/27A DPAK
-
ПроизводительОнсеми
-
Мфр. Часть #FDD86252
-
В наличии3686
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | PowerTrench® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Ta), 27A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 6V, 10V |
| RdsOn(Max)@Id,Vgs | 52mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 985 pF @ 75 V |
| PowerDissipation(Max) | 3.1W (Ta), 89W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | FDD862 |
Обзор
Description
FDD86252 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, allowing for efficient switching and minimal power loss, making it suitable for high-speed operations in various electronic devices. With a maximum drain-source voltage (Vds) rating of 25V and a continuous drain current (Id) of up to 90A, it is ideal for applications in DC-DC converters, motor drivers, and power supplies. The device typically exhibits fast switching capabilities and thermal stability, enabling reliable performance in demanding environments. Its compact package design aids in space-saving in circuit layouts, enhancing overall system efficiency. Proper thermal management is essential to maintain performance and reliability. Overall, the FDD86252 is a robust choice for engineers seeking efficient MOSFET solutions in modern electronic designs.
Equivalent
The FDD86252 chip is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include the IRF3205, BSS123, and STP16NF06. When searching for replacements, ensure they match the required voltage, current ratings, and package type for compatibility. Always check datasheets for specific characteristics before substitution.
Features
The FDD86252 is a dual-band RF power amplifier designed for use in wireless communication systems. Key features include:
1. Frequency Range: Operates in the 850 MHz to 960 MHz and 1710 MHz to 2170 MHz bands, making it suitable for various cellular and wireless applications.
2. Output Power: Provides high output power, typically around 27 dBm for optimal performance in demanding environments.
3. Efficiency: Offers high efficiency, which helps reduce power consumption and thermal management issues.
4. Linearity: Designed to maintain linearity to support complex modulation schemes, ensuring high-quality signal transmission.
5. Integration: Combines multiple functions in a compact package, facilitating ease of integration into system designs.
6. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse environments.
7. Package Type: Available in various package options for versatile design implementations.
These features make the FDD86252 suitable for applications in mobile telephony, IoT devices, and other RF communication systems.
1. Frequency Range: Operates in the 850 MHz to 960 MHz and 1710 MHz to 2170 MHz bands, making it suitable for various cellular and wireless applications.
2. Output Power: Provides high output power, typically around 27 dBm for optimal performance in demanding environments.
3. Efficiency: Offers high efficiency, which helps reduce power consumption and thermal management issues.
4. Linearity: Designed to maintain linearity to support complex modulation schemes, ensuring high-quality signal transmission.
5. Integration: Combines multiple functions in a compact package, facilitating ease of integration into system designs.
6. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse environments.
7. Package Type: Available in various package options for versatile design implementations.
These features make the FDD86252 suitable for applications in mobile telephony, IoT devices, and other RF communication systems.
Pinout
The FDD86252 is a dual N-channel MOSFET with a pin count of 8. Its primary function is to provide efficient switching for various applications, including power management in circuits.
The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first N-channel MOSFET.
3. Drain 1 - Drain terminal of the first N-channel MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second N-channel MOSFET.
6. Drain 2 - Drain terminal of the second N-channel MOSFET.
7. Drain 1 (optional overlaid with Drain 2) - For common connections.
8. Source 1 (optional overlaid with Source 2) - For common connections.
The FDD86252 is commonly used in applications requiring efficient low-resistance, high-speed switching.
The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first N-channel MOSFET.
3. Drain 1 - Drain terminal of the first N-channel MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second N-channel MOSFET.
6. Drain 2 - Drain terminal of the second N-channel MOSFET.
7. Drain 1 (optional overlaid with Drain 2) - For common connections.
8. Source 1 (optional overlaid with Source 2) - For common connections.
The FDD86252 is commonly used in applications requiring efficient low-resistance, high-speed switching.
Manufacturer
The FDD86252 is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and mixed-signal integrated circuits. The company serves various markets, including automotive, industrial, communications, and consumer electronics. With a focus on innovation and sustainability, ON Semiconductor provides energy-efficient solutions that address the growing demand for advanced technology in a variety of applications.
Application
The FDD86252 is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC Converters: Used in step-down (buck) and step-up (boost) converters for efficient voltage regulation.
2. Power Supply Circuits: Employed in switch-mode power supplies (SMPS) for optimal performance and thermal management.
3. Motor Control: Utilized in driving and controlling motors in appliances and industrial machinery.
4. Battery Management Systems: Applied in energy storage systems to enhance charging and discharging efficiency.
5. LED Drivers: Used in circuits to drive LEDs efficiently with minimal power loss.
Its low on-resistance and fast switching capabilities make it suitable for these high-efficiency applications.
1. DC-DC Converters: Used in step-down (buck) and step-up (boost) converters for efficient voltage regulation.
2. Power Supply Circuits: Employed in switch-mode power supplies (SMPS) for optimal performance and thermal management.
3. Motor Control: Utilized in driving and controlling motors in appliances and industrial machinery.
4. Battery Management Systems: Applied in energy storage systems to enhance charging and discharging efficiency.
5. LED Drivers: Used in circuits to drive LEDs efficiently with minimal power loss.
Its low on-resistance and fast switching capabilities make it suitable for these high-efficiency applications.
Package
The FDD86252 is typically available in a TO-220 package type. This package is commonly used for power MOSFETs and allows for efficient heat dissipation and easy mounting on heatsinks.
