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FDMC5614P
+БОМMOSFET P-CH 60V 5.7A/13.5A 8MLP
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ПроизводительОнсеми
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Мфр. Часть #FDMC5614P
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Пакет PowerWDFN-8
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В наличии6956
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 5.7A (Ta), 13.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 5.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1055 pF @ 30 V |
| PowerDissipation(Max) | 2.1W (Ta), 42W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-MLP (3.3x3.3) |
Обзор
Description
Key specifications include a drain-source voltage (V_DS) of up to -30V and a continuous drain current (I_D) rating of up to -12A, allowing it to handle moderate power levels efficiently. The FDMC5614P also exhibits a low gate charge, enhancing its performance in high-frequency applications. Its small form factor contributes to minimized power losses and improved thermal performance.
This MOSFET is typically used in consumer electronics, automotive, and industrial applications, providing reliable operation across various environments. Its robust design ensures long-term durability and consistent performance, making it a popular choice for engineers seeking efficient power management solutions.
Equivalent
1. IRF4905 from Infineon
2. NDP6020P from ON Semiconductor
3. AOD4185 from Alpha & Omega Semiconductor
It's important to check the datasheet specifications to ensure the equivalents match your specific requirements in terms of voltage, current, Rds(on), and package type.
Features
1. P-Channel MOSFET: Utilizes a P-channel for effective switching, typically used for high-side switching applications.
2. Voltage Ratings: Offers a drain-source voltage (Vds) rating of -30V, suitable for various low to medium voltage applications.
3. Current Capacity: Supports a continuous drain current (Id) of up to -6.3A, handling significant power loads.
4. Low On-Resistance: Features a low on-resistance (Rds(on)) for efficient current flow and minimal power loss.
5. Compact Package: Available in a Power 56 package, optimizing space and thermal performance in compact designs.
6. Thermal Performance: Designed to dissipate heat effectively, enabling reliable operation under high-power conditions.
7. Applications: Ideal for DC-DC converters, load switches, and battery protection circuits in portable and consumer electronics.
These features make the FDMC5614P a versatile component for designers looking to implement efficient power management solutions in their electronic designs.
Pinout
In terms of pin count, the FDMC5614P features a 6-pin configuration. The functions of the pins are generally as follows:
1. Gate (G): This pin controls the conduction state of the MOSFET. When voltage is applied to the gate, the MOSFET turns on or off.
2. Source (S): This is the terminal where the current enters when the MOSFET is on. It is directly connected to the load in high-side switching applications.
3. Drain (D): This is the terminal where the current exits when the MOSFET is on. It typically connects to the power supply in a high-side configuration.
The remaining pins are usually connected internally or serve to provide mechanical stability and heat dissipation. Check the specific datasheet for the FDMC5614P for the precise pin layout and additional functional details.