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FDMC6679AZ
+БОМMOSFET P-CH 30V 11.5A/20A 8MLP
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ПроизводительОнсеми
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Мфр. Часть #FDMC6679AZ
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В наличии3920
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 11.5A (Ta), 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10mOhm @ 11.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 3970 pF @ 15 V |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
Обзор
Description
The FDMC6679AZ is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications requiring efficient power management. It is produced by ON Semiconductor, a company known for its expertise in semiconductor and power solutions. The component is part of the company's PowerTrench® MOSFET series, which is recognized for providing low on-state resistance, minimizing power loss and heat generation.
Key features of the FDMC6679AZ include a low gate charge and fast switching speed, making it suitable for high-efficiency applications such as DC-DC converters, load switches, and synchronous rectification in power supplies. Its compact, surface-mount package (often a Power33 or similar) allows for enhanced density and improved thermal performance in tightly packed electronic circuits. The dual configuration allows for flexible design options, enabling engineers to use it in a variety of circuit topologies.
Overall, the FDMC6679AZ MOSFET is designed for high-performance and reliable operation in modern electronic devices, contributing to improved power efficiency and system robustness.
Key features of the FDMC6679AZ include a low gate charge and fast switching speed, making it suitable for high-efficiency applications such as DC-DC converters, load switches, and synchronous rectification in power supplies. Its compact, surface-mount package (often a Power33 or similar) allows for enhanced density and improved thermal performance in tightly packed electronic circuits. The dual configuration allows for flexible design options, enabling engineers to use it in a variety of circuit topologies.
Overall, the FDMC6679AZ MOSFET is designed for high-performance and reliable operation in modern electronic devices, contributing to improved power efficiency and system robustness.
Equivalent
The FDMC6679AZ is a power MOSFET. Equivalent or similar products include those from other manufacturers like the Nexperia PSMN7R0-40YS, Infineon BSC067N06LS3, or ON Semiconductor NTMFS4935NT1G. When selecting equivalents, ensure a comparison of key specifications such as voltage, current ratings, RDS(on), and package type to ensure compatibility with your application. Always consult the datasheets for detailed specifications.
Features
The FDMC6679AZ is a dual N-channel MOSFET designed for switching applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of approximately 10A, depending on the specific application conditions.
2. Low On-Resistance: This MOSFET is characterized by a low R_DS(on), which minimizes power losses and improves efficiency, especially in power conversion and management applications.
3. Package Type: It is available in a compact, surface-mount package, making it suitable for space-constrained applications.
4. Thermal Performance: It offers good thermal performance, which helps in managing heat dissipation in high-power applications.
5. Fast Switching: The MOSFET features fast switching speeds, which are beneficial for high-frequency applications.
6. Applications: Commonly used in DC-DC converters, load switches, and other power management systems.
7. Enhanced ESD Protection: The device includes built-in ESD protection for increased reliability in various operating conditions.
These features make the FDMC6679AZ suitable for efficient and reliable performance in a range of electronic applications.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of approximately 10A, depending on the specific application conditions.
2. Low On-Resistance: This MOSFET is characterized by a low R_DS(on), which minimizes power losses and improves efficiency, especially in power conversion and management applications.
3. Package Type: It is available in a compact, surface-mount package, making it suitable for space-constrained applications.
4. Thermal Performance: It offers good thermal performance, which helps in managing heat dissipation in high-power applications.
5. Fast Switching: The MOSFET features fast switching speeds, which are beneficial for high-frequency applications.
6. Applications: Commonly used in DC-DC converters, load switches, and other power management systems.
7. Enhanced ESD Protection: The device includes built-in ESD protection for increased reliability in various operating conditions.
These features make the FDMC6679AZ suitable for efficient and reliable performance in a range of electronic applications.
Pinout
The FDMC6679AZ is a PowerTrench® MOSFET from ON Semiconductor, designed for power management applications. It is a dual N-channel MOSFET, and the device typically comes in an 8-pin package, specifically a Power 56 package.
Here is a brief overview of its pin configuration and function:
1. Pins 1-3: Source (S) for the first MOSFET.
2. Pin 4: Gate (G) for the first MOSFET.
3. Pins 5-6: Gate (G) for the second MOSFET.
4. Pin 7: Drain (D) for the second MOSFET.
5. Pins 8-10: Drain (D) for the first MOSFET (internally connected).
These pins facilitate the dual N-channel configuration, enabling efficient power switching in various applications such as DC-DC converters, load switches, and general-purpose power management. The FDMC6679AZ is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency power applications.
Here is a brief overview of its pin configuration and function:
1. Pins 1-3: Source (S) for the first MOSFET.
2. Pin 4: Gate (G) for the first MOSFET.
3. Pins 5-6: Gate (G) for the second MOSFET.
4. Pin 7: Drain (D) for the second MOSFET.
5. Pins 8-10: Drain (D) for the first MOSFET (internally connected).
These pins facilitate the dual N-channel configuration, enabling efficient power switching in various applications such as DC-DC converters, load switches, and general-purpose power management. The FDMC6679AZ is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency power applications.
Manufacturer
The FDMC6679AZ is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor supplier that designs and produces a wide range of semiconductor components used in various electronics applications. The company focuses on efficient power management, connectivity, and sensing technologies. It serves diverse markets including automotive, industrial, cloud power, computing, consumer electronics, and communications.
Application
The FDMC6679AZ is a dual N-channel MOSFET used primarily in power management applications. Its areas of application include voltage regulation, power conversion, and load switching in computing, telecommunications, and consumer electronics. This component is well-suited for DC-DC converters, power supplies, and battery management systems due to its low on-resistance and efficient thermal performance. Additionally, it is used in portable devices to optimize power efficiency and extend battery life. The MOSFET's compact packaging makes it ideal for space-constrained applications.
Package
The FDMC6679AZ is a MOSFET with a Power 56 package type, which is a form of surface-mount technology (SMT) package. This package is designed for efficient heat dissipation and is commonly used in power management applications.
