FDMC6688P

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FDMC6688P

+БОМ

MOSFET P-CH 20V 14A/56A 8PQFN

  • ПроизводительОнсеми

  • Мфр. Часть #FDMC6688P

  • Лист данных FDMC6688P DataSheet

  • В наличии7477

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Спецификации

Атрибут Ценность
Series PowerTrench®
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 7435 pF @ 10 V
Power Dissipation (Max) 2.3W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3), Power33
Package / Case 8-PowerWDFN
Base Product Number FDMC6688

Обзор

Description

The FDMC6688P is a high-performance N-channel MOSFET designed for various applications, including power management and voltage regulation. With a low on-resistance and fast switching capabilities, it ensures efficient energy transfer and reduced heat generation in electronic circuits. The device typically features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 50A, making it suitable for demanding applications such as DC-DC converters and motor drivers.
The FDMC6688P is packaged in a compact SO-8 form factor, allowing for easy integration into space-constrained designs. Its low gate charge contributes to faster switching times, improving overall system efficiency. Additionally, it exhibits excellent thermal performance, enabling reliable operation in high-power environments.
This MOSFET is ideal for designers looking to enhance performance in power electronic systems while minimizing energy loss. Its robust specifications and reliability make it a popular choice in the industry.

Equivalent

The FDMC6688P is a dual N-channel MOSFET used in power management applications. Equivalent products include the IRF3035, Si4933, and BSC010N06LS. For specific applications, alternatives may also include similar devices from manufacturers like Vishay, Infineon, and ON Semiconductor, provided they match the voltage, current ratings, and package specifications. Always verify the electrical characteristics to ensure compatibility.

Features

The FDMC6688P is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low On-Resistance (RDS(on)): This ensures minimal conduction losses, making it suitable for efficient power delivery in DC-DC converters.

2. High Voltage Rating: It typically supports a voltage rating of up to 30V, allowing it to handle a variety of applications.
3. High Current Capability: The device can handle high continuous drain currents, making it ideal for demanding power applications.
4. Fast Switching Speed: This characteristic enhances the efficiency in switching applications, reducing losses during operation.
5. Compact Package: Usually available in a surface-mount package (e.g., SO-8), providing a space-efficient solution for circuit designs.
6. Thermal Performance: Designed to manage heat effectively, it can operate reliably under various thermal conditions.
These features make the FDMC6688P suitable for applications in power supplies, electric vehicles, and various consumer electronics.

Pinout

The FDMC6688P is a dual N-channel MOSFET designed for power management applications, commonly used in synchronous buck converters. It has a total of 8 pins.
The pin functions are as follows:
1. Source (S) - Connects to the lower side of the load, providing the return path for current.
2. Gate (G) - Controls the MOSFET's on/off state through voltage applied to it.
3. Drain (D) - Connects to the upper side of the load, allowing current to flow through the MOSFET when activated.
4. Source (S) - Another source pin for the second MOSFET in the package.
5. Gate (G) - Another gate pin for the second MOSFET.
6. Drain (D) - Another drain pin for the second MOSFET.
7. Thermal pad - Provides heat dissipation capabilities; typically connected to the PCB ground.
For specific applications and configurations, it's essential to refer to the manufacturer's datasheet for detailed electrical characteristics and recommended operating conditions.

Manufacturer

The FDMC6688P is manufactured by Fairchild Semiconductor, a company known for its expertise in power management and analog solutions. Fairchild Semiconductor is a semiconductor company that designs and manufactures a wide range of electronic components, including transistors, diodes, and integrated circuits.
Founded in 1957, Fairchild played a pivotal role in the development of the semiconductor industry and has been involved in various innovations, particularly in the fields of power management and energy-efficient solutions. The FDMC6688P itself is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in power applications, including DC-DC converters, which are essential for efficiently managing power in electronic devices.
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, a larger organization that continues to provide a broad portfolio of semiconductor solutions across various sectors, including automotive, industrial, and consumer electronics. Thus, the FDMC6688P is part of ON Semiconductor's offerings, reflecting their commitment to innovation in the semiconductor space.

Application

The FDMC6688P is a dual N-channel MOSFET designed for applications such as power management, DC-DC converters, and synchronous rectification in power supplies. Its low on-resistance and fast switching capability make it suitable for high-efficiency applications, including battery management systems, automotive power modules, and industrial power electronics. Additionally, it can be used in server and telecommunications equipment for improved thermal performance and energy efficiency.

Package

The FDMC6688P is offered in a 5mm x 6mm, 8-lead Dual Flat No-lead (DFN) package type. This compact packaging is designed for efficient thermal performance and space-saving in applications such as power management and switching.

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