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FDME510PZT
+БОМMOSFET P-CH 20V 6A MICROFET
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ПроизводительОнсеми
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Мфр. Часть #FDME510PZT
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В наличии7169
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 10 V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MicroFet 1.6x1.6 Thin |
| Package / Case | 6-PowerUFDFN |
| Base Product Number | FDME510 |
Обзор
Description
Students will learn to analyze fluid systems, solve complex engineering problems, and leverage simulation tools for design and optimization. The course emphasizes practical applications in industries such as aerospace, automotive, and energy, preparing students for real-world challenges in fluid mechanics.
Through a combination of lectures, hands-on projects, and case studies, FDME510PZT aims to equip students with both the theoretical knowledge and practical skills necessary for success in fluid-related engineering roles.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 50A, allowing it to handle significant load requirements.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 0.4 ohms, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: The device supports rapid switching speeds, making it ideal for high-frequency applications.
5. Thermal Management: It features a low thermal resistance, promoting effective heat dissipation and reliability under load.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive from low-voltage control circuits.
7. Packaging: Typically available in TO-220 or similar packages, ensuring robust thermal performance.
These attributes make the FDME510PZT suitable for power supplies, motor control, and other electronic applications requiring efficient switching.
Pinout
1. Gate (G) - Pin 1: Controls the MOSFET operation by applying voltage.
2. Drain (D) - Pin 2: The output terminal where the load is connected.
3. Source (S) - Pin 3: The input terminal, connected to ground in typical applications.
4. Gate (G) - Pin 4: Another gate connection, sometimes used for redundancy.
5. Drain (D) - Pin 5: Another drain connection for enhanced current handling.
6. Source (S) - Pin 6: Another source connection for additional flexibility.
This device is commonly used in switching applications due to its low on-resistance and high-speed capabilities.
Manufacturer
ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability and innovation. The company operates multiple manufacturing facilities and is known for its advanced technology in areas like power management, sensors, and connectivity. With a robust portfolio, ON Semiconductor plays a significant role in the semiconductor industry, catering to the growing demand for integrated circuits and semiconductor components across diverse applications.
Application
1. Sensors: Employed in pressure, vibration, and acceleration sensors.
2. Actuators: Utilized in precise movement applications like micro-positioning systems.
3. Energy Harvesting: Converts mechanical energy into electrical energy for powering small devices.
4. Ultrasonic Devices: Used in ultrasonic transducers for medical imaging and cleaning applications.
5. Wireless Communication: Enhances signal transmission in RF devices.
These versatile applications leverage its efficient piezoelectric properties for effective energy conversion and sensing capabilities.