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FDMS6673BZ
+БОМSMALL SIGNAL FIELD-EFFECT TRANSI
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ПроизводительКомпания Fairchild Semiconductor
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Мфр. Часть #FDMS6673BZ
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Лист данных FDMS6673BZ DataSheet
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Пакет TDFN-8
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В наличии3440
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 15.2A (Ta), 28A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.8mOhm @ 15.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 5915 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Обзор
Description
If FDMS6673BZ is indeed a MOSFET or similar semiconductor, it would be used in electronic circuits for switching or amplifying electronic signals. These components are crucial in managing power in various applications, from consumer electronics to industrial systems.
For specifics, you would typically refer to the datasheet provided by the manufacturer, which offers detailed information on electrical characteristics, thermal performance, physical dimensions, and application guidelines. Manufacturers like Fairchild Semiconductor (now part of ON Semiconductor) or similar companies often produce such components, and their datasheets are vital resources for engineers and designers to ensure the component meets their application needs. If this is for a specific course or topic, please provide more context for a tailored response.
Equivalent
Features
1. Low On-Resistance: It features a low RDS(on), which minimizes conduction losses, thereby improving efficiency.
2. Voltage Rating: The MOSFET is typically rated for a maximum drain-source voltage (VDS) of around 30V, making it suitable for low to medium voltage applications.
3. Current Handling: It can handle a continuous drain current, which is often suitable for demanding applications.
4. Thermal Performance: The device is designed to offer good thermal performance, which helps in maintaining reliability under high load conditions.
5. Package Type: Typically available in a compact package such as an SO-8, which aids in space-efficient designs.
6. Applications: It is commonly used in DC-DC converters, load switches, and other power management applications.
These features make the FDMS6673BZ a versatile choice for a variety of applications requiring efficient power switching and management.
Pinout
The pin functions for the FDMS6673BZ generally include:
1. Gate (G): Controls the MOSFET's operation by applying a voltage to turn the device on or off.
2. Drain (D): The terminal through which the main current flows into the MOSFET.
3. Source (S): The terminal through which current exits the MOSFET.
The specific functions and pin configuration should be verified from the datasheet of the FDMS6673BZ, as the exact pin assignments might vary slightly based on the manufacturer’s design or additional integrated features.