FDS6681Z

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FDS6681Z

+БОМ

MOSFET P-CH 30V 20A 8SOIC

  • ПроизводительОнсеми

  • Мфр. Часть #FDS6681Z

  • Лист данных FDS6681Z DataSheet

  • Пакет SOP-8

  • В наличии2332

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 20A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 4.6mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 260 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 7540 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Обзор

Description

FDS6681Z is likely a course code that pertains to a specific subject, possibly within a university or college curriculum. While the exact specifics of the course can vary widely depending on the institution, "FDS" might commonly stand for a subject area such as Food Science, Fashion Design, or even Financial Data Systems, among others. However, without more context, it's challenging to specify the exact nature of the course.
In a general sense, an introductory course such as this would typically cover fundamental concepts and principles relevant to the field. It might include lectures, practical sessions, and assessments designed to provide students with a foundational understanding and prepare them for more advanced studies within that discipline. The course could also focus on developing relevant skills, critical thinking, and problem-solving abilities.
For precise details, including course objectives, structure, and content, it's best to refer to the syllabus or course description provided by the educational institution offering FDS6681Z.

Equivalent

The FDS6681Z is a dual N-channel MOSFET generally used for power management applications. Equivalent products include:
1. IRF7319 - by International Rectifier, offering similar performance.
2. Si4936DY - by Vishay, with comparable specifications.
3. AO4805 - by Alpha & Omega Semiconductor, another viable alternative.
When selecting an equivalent, verify the parameters like voltage, current ratings, and package type to ensure compatibility.

Features

The FDS6681Z is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficient performance in power management applications. Here are its key features:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) of approximately 10A, making it suitable for moderate power applications.
2. Low On-Resistance: It features low on-resistance (R_DS(on)), which minimizes power loss and heat generation, enhancing efficiency in switching applications.
3. Fast Switching Speed: The FDS6681Z is designed for rapid switching, which is beneficial in high-frequency applications and reduces energy waste.
4. Compact Package: It is usually available in a small package like SO-8, facilitating easy integration into compact circuit designs.
5. Thermal Performance: It offers good thermal management capabilities, often featuring a low thermal resistance from junction to ambient (R_θJA).
6. Applications: Commonly used in DC-DC converters, power management systems, load switches, and other applications requiring reliable and efficient switching.
These features make the FDS6681Z a versatile choice for designers looking for a balance of performance and efficiency.

Pinout

The FDS6681Z is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. It typically comes in an SO-8 package and has a total of 8 pins. However, the effective pin count related to its functionality is 3, as some pins are internally connected.
Here's a brief overview of the pin functions:
1. Gate (G): This is the control terminal that modulates the conductivity between the drain and source. It typically engages the MOSFET when a suitable voltage is applied.
2. Drain (D): This is the terminal where the main current flows out of the MOSFET. In the SO-8 package, multiple pins (usually 3 or 4) are often connected together to handle higher currents.
3. Source (S): This terminal is where the main current enters the MOSFET. Like the drain, the source typically shares multiple connected pins for higher current capacity.
The FDS6681Z is utilized in portable electronics, DC-DC converters, and other applications requiring efficient switching and low on-state resistance.

Manufacturer

The FDS6681Z is manufactured by ON Semiconductor, a company that produces semiconductors and microchips. ON Semiconductor is a global supplier of semiconductor components, solutions, and systems used in a variety of applications including automotive, industrial, cloud power, and IoT. The company focuses on providing energy-efficient, high-performance solutions for electronics, aiming to enable innovative designs while minimizing energy consumption and cost.

Application

The FDS6681Z is a power MOSFET typically used in applications requiring efficient power management and switching. Common application areas include power supply circuits, DC-DC converters, motor control systems, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-frequency switching applications. The device is also utilized in consumer electronics, automotive systems, and industrial equipment where energy efficiency and thermal management are crucial. Its compact package makes it ideal for space-constrained applications, allowing for efficient thermal dissipation and minimal power loss.

Package

The FDS6681Z is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a package type of SO-8 (Small Outline 8-lead). This package is commonly used for surface-mount applications, offering a compact design suitable for efficient thermal management and space-saving implementations in electronic circuits.

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