Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 7.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 19.8mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2570 pF @ 75 V |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Обзор
Description
The FDS86240 is a dual N-channel PowerTrench MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Minimizes conduction losses.
- Fast Switching: Optimized for high-frequency DC-DC converters.
- Compact Package: Typically in SO-8 for space-constrained designs.
- High Current Handling: Suitable for load switching, motor control, and power supplies.
Common uses include synchronous rectification, battery protection, and voltage regulation in portable electronics, servers, and automotive systems.
Key Specs (typical):
- VDS: 40V
- ID: 6.5A (per channel)
- RDS(on): ~25mΩ (at VGS=10V).
For detailed performance curves and application notes, refer to the datasheet.
- Low On-Resistance (RDS(on)): Minimizes conduction losses.
- Fast Switching: Optimized for high-frequency DC-DC converters.
- Compact Package: Typically in SO-8 for space-constrained designs.
- High Current Handling: Suitable for load switching, motor control, and power supplies.
Common uses include synchronous rectification, battery protection, and voltage regulation in portable electronics, servers, and automotive systems.
Key Specs (typical):
- VDS: 40V
- ID: 6.5A (per channel)
- RDS(on): ~25mΩ (at VGS=10V).
For detailed performance curves and application notes, refer to the datasheet.
Features
The FDS86240 is an N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 4.3mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Low Gate Charge (Qg): Reduces switching losses
- Avalanche Energy Rated: Enhances ruggedness
- Thermal Performance: Low thermal resistance
- Package: TO-252 (DPAK), surface-mount design
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and computing applications.
- Voltage Rating: 40V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 4.3mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Low Gate Charge (Qg): Reduces switching losses
- Avalanche Energy Rated: Enhances ruggedness
- Thermal Performance: Low thermal resistance
- Package: TO-252 (DPAK), surface-mount design
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and computing applications.
Pinout
The FDS86240 is a dual N-channel PowerTrench MOSFET in an SO-8 package.
Pin Count: 8 pins.
Pin Functions:
1. Source 1 (S1): Connected to the source of the first MOSFET (Pins 1, 2, 3).
2. Gate 1 (G1): Controls the first MOSFET (Pin 4).
3. Gate 2 (G2): Controls the second MOSFET (Pin 5).
4. Source 2 (S2): Connected to the source of the second MOSFET (Pins 6, 7, 8).
5. Drains (D1 & D2): Internally connected to both MOSFET drains (Exposed thermal pad, not a separate pin).
Key Features:
- 30V drain-source voltage.
- High current handling (up to 20A per channel).
- Low on-resistance (RDS(on) ~3.7mΩ typical).
Commonly used in power management, DC-DC converters, and motor control.
Pin Count: 8 pins.
Pin Functions:
1. Source 1 (S1): Connected to the source of the first MOSFET (Pins 1, 2, 3).
2. Gate 1 (G1): Controls the first MOSFET (Pin 4).
3. Gate 2 (G2): Controls the second MOSFET (Pin 5).
4. Source 2 (S2): Connected to the source of the second MOSFET (Pins 6, 7, 8).
5. Drains (D1 & D2): Internally connected to both MOSFET drains (Exposed thermal pad, not a separate pin).
Key Features:
- 30V drain-source voltage.
- High current handling (up to 20A per channel).
- Low on-resistance (RDS(on) ~3.7mΩ typical).
Commonly used in power management, DC-DC converters, and motor control.
Application
The FDS86240 is a dual N-channel PowerTrench MOSFET, commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits, brushed DC motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Switching Circuits – Load switches, power distribution.
5. Consumer Electronics – Battery management, power supplies.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for high-performance, energy-efficient applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits, brushed DC motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Switching Circuits – Load switches, power distribution.
5. Consumer Electronics – Battery management, power supplies.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for high-performance, energy-efficient applications.
Package
The FDS86240 is a dual N-channel PowerTrench MOSFET from ON Semiconductor. It comes in an 8-pin SOIC (SO-8) package, which is a surface-mount type with a compact footprint. This package is widely used for power management applications due to its thermal efficiency and space-saving design.
