FDS9926A

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FDS9926A

+БОМ

MOSFET 2N-CH 20V 6.5A 8SOIC

  • ПроизводительОнсеми

  • Мфр. Часть #FDS9926A

  • Пакет SOIC-8

  • В наличии4783

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 6.5A
Rds On(Max) @ Id Vgs 30mOhm @ 6.5A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 9nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 650pF @ 10V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Обзор

Description

The FDS9926A is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of electronic applications. It is well-suited for tasks that require high-speed switching and efficient power management. Key features of the FDS9926A include:
1. Dual N-Channel Configuration: It consists of two N-channel MOSFETs in one package, allowing for compact design and efficient use of board space.
2. Low On-Resistance: The MOSFETs have low on-resistance, which reduces power loss and enhances efficiency in power applications.
3. Fast Switching Speed: The FDS9926A is capable of fast switching, which is beneficial in applications requiring quick response times.
4. Small Form Factor: Available in a compact package, it is ideal for space-constrained applications.
5. Applications: Commonly used in DC-DC converters, load switches, and power supply applications.
6. Thermal Management: It features good thermal performance, which is crucial for maintaining reliability and performance in high-power applications.
By integrating these features, the FDS9926A serves as a reliable component in various electronic circuits.

Equivalent

The FDS9926A is a dual N-channel MOSFET. Equivalent products include:
1. SI4936DY from Vishay
2. IRF7319 from Infineon
3. AO4800 from Alpha & Omega Semiconductor
4. DMG9926UDW from Diodes Incorporated
These equivalents typically match the basic electrical characteristics and package type, but it's essential to verify specific parameters and pin configurations for compatibility in your application.

Features

The FDS9926A is a dual N-channel MOSFET designed for electronic applications requiring high efficiency and compact size. Key features include:
1. Low On-Resistance: It offers low RDS(on) values, which minimizes power loss and improves efficiency.
2. Dual N-Channel Configuration: This allows for versatile use in various circuits, such as switching, amplifying, or in power management systems.
3. SO-8 Package: The small and thermally efficient packaging makes it suitable for high-density board designs.
4. High-Speed Switching: The device supports fast switching speeds, which is advantageous in applications demanding quick response times.
5. Low Gate Charge: This feature ensures efficient operation with minimal power consumption from the control circuitry.
6. Robust Design: The FDS9926A is built to handle significant power loads, making it reliable for demanding applications.
7. Wide Voltage Range: Supports a broad range of input voltages, accommodating various requirements in different electronic systems.
These features make the FDS9926A an ideal choice for applications in power management, load switching, and DC-DC converters.

Pinout

The FDS9926A is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. It typically comes in an 8-pin SOIC (Small Outline Integrated Circuit) package.
Pin Count:
- 8 pins.
Pin Functions:
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal for the second MOSFET.
4. Pin 4 (Drain 2): Drain terminal for the second MOSFET.
5. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
6. Pin 6 (Source 2): Source terminal for the second MOSFET.
7. Pin 7 (Drain 1): Drain terminal for the first MOSFET.
8. Pin 8 (Drain 1): Drain terminal for the first MOSFET.
The device is designed to handle high-speed switching and low on-state resistance, making it suitable for efficient power conversion and management in various applications.

Manufacturer

The FDS9926A is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in designing and producing a broad range of semiconductor components and devices. These include power and signal management, logic, discrete, and custom devices for various applications, such as automotive, industrial, consumer electronics, computing, and communications.
Onsemi is recognized for its focus on energy-efficient electronics and advanced semiconductor solutions, making significant contributions to sectors like automotive electrification, industrial automation, and 5G infrastructure. The company is committed to innovation and sustainability, aiming to provide products that enhance energy efficiency and reduce the environmental impact of electronic devices.

Application

The FDS9926A is a dual N-channel MOSFET commonly used in various applications due to its efficiency in power management. Key areas include DC-DC converters, load switches, and power management in portable devices. It is also used in battery-powered applications, motor control, and LED drivers. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power conversion, enhancing performance in electronic systems. Additionally, it is used in automotive electronics and industrial equipment, where reliable and compact power control is essential.

Package

The FDS9926A is a dual N-channel MOSFET packaged in an SO-8 (Small Outline) package. This package type is used for surface-mount applications, providing a compact and efficient solution for integrating dual MOSFETs in electronic circuits.

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