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FGAF40S65AQ
+БОМIGBT TRENCH FS 650V 80A TO-3PF-3
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ПроизводительОнсеми
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Мфр. Часть #FGAF40S65AQ
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Лист данных FGAF40S65AQ DataSheet
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В наличии4705
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Power - Max | 94 W |
| Switching Energy | 132µJ (on), 62µJ (off) |
| Input Type | Standard |
| Gate Charge | 75 nC |
| Td (on / off) @ 25°C | 17.8ns/81.6ns |
| Test Condition | 400V, 10A, 6Ohm, 15V |
| Reverse Recovery Time (trr) | 274 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Supplier Device Package | TO-3PF-3 |
| Base Product Number | FGAF40 |
Обзор
Description
The device benefits from SiC technology, offering advantages like higher thermal conductivity, lower switching losses, and improved efficiency compared to traditional silicon-based MOSFETs. This enhances performance in high-frequency operation and reduces the overall size of power systems.
The FGAF40S65AQ comes with a low gate charge, enabling faster switching speeds and minimizing energy loss during operation. Additionally, it provides robust thermal performance and reliability, making it ideal for demanding environments.
Overall, the FGAF40S65AQ is an excellent choice for engineers seeking to improve the efficiency and performance of power electronic designs, particularly in applications requiring high voltage and high efficiency.
Equivalent
Features
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: 40A, providing robust performance for demanding tasks.
3. Low On-Resistance: Ensures efficient operation with reduced power losses.
4. Fast Switching Speed: Improves efficiency and performance in switching applications.
5. High Thermal Conductivity: Facilitates effective heat dissipation, enhancing reliability.
6. Integrated Schottky Diode: Provides reverse recovery benefits and reduces ringing.
7. Robust Gate Oxide: Improved reliability under high-temperature conditions.
8. Wide Bandgap Material: Allows operation at higher temperatures and voltages compared to traditional silicon devices.
These features make the FGAF40S65AQ suitable for applications in electric vehicles, renewable energy systems, and industrial power supplies.
Pinout
Manufacturer
Infineon is known for its focus on innovation and efficiency, providing advanced solutions for power management, connectivity, and security in applications ranging from electric vehicles to IoT devices. The FGAF40S65AQ, specifically, is a power MOSFET designed for high-voltage applications, showcasing Infineon’s expertise in power semiconductor technology.
With a commitment to sustainability and energy efficiency, Infineon plays a vital role in enabling the transition to greener technologies. The company is a key player in the semiconductor industry, striving to deliver high-performance products that meet the growing demands of modern electronics.
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Inverters: Utilized in photovoltaic inverters and motor drives for renewable energy systems.
3. DC-DC Converters: Ideal for buck, boost, and buck-boost converters in various electronic devices.
4. Electric Vehicles: Employed in battery management systems and chargers.
5. Industrial Automation: Used in drive circuits for automation equipment and robotics.
Overall, it supports high-efficiency switching applications in various electronic systems.